Inventor
BYUN HYUN-GEUN
KR8 patents
Patents
8 patentsUS7582941B2Sep 1, 2009
Magnetic memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD14 citations92
US7427531B2Sep 23, 2008
Phase change memory devices employing cell diodes and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD27 citations92
US6594818B2Jul 15, 2003
Memory architecture permitting selection of storage density after fabrication of active circuitry
SAMSUNG ELECTRONICS CO LTD34 citations92
US7151696B2Dec 19, 2006
Integrated circuit memory devices having hierarchical bit line selection circuits therein
SAMSUNG ELECTRONICS CO LTD8 citations73
US5754487AMay 19, 1998
Bit line precharge circuit
SAMSUNG ELECTRONICS CO LTD14 citations73
US7994493B2Aug 9, 2011
Phase change memory devices employing cell diodes and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US8043869B2Oct 25, 2011
Magnetic memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US7851878B2Dec 14, 2010
Magnetic memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52