Inventor
CHEEK JON
US23 patents
Patents
23 patentsUS6300205B1Oct 9, 2001
Method of making a semiconductor device with self-aligned active, lightly-doped drain, and halo regions
ADVANCED MICRO DEVICES INC67 citations95
US6114211ASep 5, 2000
Semiconductor device with vertical halo region and methods of manufacture
ADVANCED MICRO DEVICES INC62 citations95
US6110786AAug 29, 2000
Semiconductor device having elevated gate electrode and elevated active regions and method of manufacture thereof
ADVANCED MICRO DEVICES INC19 citations92
US6104077AAug 15, 2000
Semiconductor device having gate electrode with a sidewall air gap
ADVANCED MICRO DEVICES INC46 citations92
US5935766AAug 10, 1999
Method of forming a conductive plug in an interlevel dielectric
ADVANCED MICRO DEVICES INC20 citations92
US5913116AJun 15, 1999
Method of manufacturing an active region of a semiconductor by diffusing a dopant out of a sidewall spacer
ADVANCED MICRO DEVICES INC23 citations92
US6833307B1Dec 21, 2004
Method for manufacturing a semiconductor component having an early halo implant
ADVANCED MICRO DEVICES INC38 citations91
US6075417AJun 13, 2000
Ring oscillator test structure
ADVANCED MICRO DEVICES INC19 citations91
US5977600ANov 2, 1999
Formation of shortage protection region
ADVANCED MICRO DEVICES INC19 citations90
US7235433B2Jun 26, 2007
Silicon-on-insulator semiconductor device with silicon layers having different crystal orientations and method of forming the silicon-on-insulator semiconductor device
ADVANCED MICRO DEVICES INC13 citations84
US6638829B1Oct 28, 2003
Semiconductor structure having a metal gate electrode and elevated salicided source/drain regions and a method for manufacture
ADVANCED MICRO DEVICES INC15 citations84
US6162694ADec 19, 2000
Method of forming a metal gate electrode using replaced polysilicon structure
ADVANCED MICRO DEVICES INC19 citations84
US7208383B1Apr 24, 2007
Method of manufacturing a semiconductor component
ADVANCED MICRO DEVICES INC19 citations83
US6159812ADec 12, 2000
Reduced boron diffusion by use of a pre-anneal
ADVANCED MICRO DEVICES INC16 citations82
US6417539B2Jul 9, 2002
High density memory cell assembly and methods
ADVANCED MICRO DEVICES INC7 citations74
US6074906AJun 13, 2000
Complementary metal-oxide semiconductor device having source/drain regions formed using multiple spacers
ADVANCED MICRO DEVICES INC11 citations74
US5976925ANov 2, 1999
Process of fabricating a semiconductor devise having asymmetrically-doped active region and gate electrode
ADVANCED MICRO DEVICES INC12 citations74
US7074657B2Jul 11, 2006
Low-power multiple-channel fully depleted quantum well CMOSFETs
ADVANCED MICRO DEVICES INC5 citations73
US6674135B1Jan 6, 2004
Semiconductor structure having elevated salicided source/drain regions and metal gate electrode on nitride/oxide dielectric
ADVANCED MICRO DEVICES INC5 citations63
US5970311AOct 19, 1999
Method and structure for optimizing the performance of a semiconductor device having dense transistors
ADVANCED MICRO DEVICES INC6 citations63
US7253484B2Aug 7, 2007
Low-power multiple-channel fully depleted quantum well CMOSFETs
ADVANCED MICRO DEVICES INC2 citations62
US6242330B1Jun 5, 2001
Process for breaking silicide stringers extending between silicide areas of different active regions
ADVANCED MICRO DEVICES INC0 citations52
US5970349AOct 19, 1999
Semiconductor device having one or more asymmetric background dopant regions and method of manufacture thereof
ADVANCED MICRO DEVICES INC1 citations52