Inventor
LIN TZU-YU
TW44 patents
⚠️ This page may combine multiple inventors who share the name “LIN TZU-YU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LIANHONG ART CO LTD
11 patentsUS9677308B1Jun 13, 2017
Hinge having movable shaft
LIANHONG ART CO LTD100 citations96
US9464471B1Oct 11, 2016
Dual shaft hinge device
LIANHONG ART CO LTD35 citations94
US9404298B1Aug 2, 2016
Hinge structure
LIANHONG ART CO LTD49 citations94
US9366064B1Jun 14, 2016
Hinge structure
LIANHONG ART CO LTD26 citations93
US10480227B1Nov 19, 2019
Hinge device with dual shaft
LIANHONG ART CO LTD35 citations92
US8966715B1Mar 3, 2015
Synchronous rotation mechanism for dual-shaft hinge
LIANHONG ART CO LTD25 citations90
US8347461B2Jan 8, 2013
Slide cover mounting structure
LIANHONG ART CO LTD8 citations84
US9127490B2Sep 8, 2015
Transmission mechanism for dual-shaft hinge
LIANHONG ART CO LTD15 citations80
US11435024B2Sep 6, 2022
Rebounding pivot module
LIANHONG ART CO LTD4 citations73
US10036189B2Jul 31, 2018
Synchronous hinge device
LIANHONG ART CO LTD6 citations73
US12504675B2Dec 23, 2025
Tripod-head structure
LIANHONG ART CO LTD0 citations43
TAIWAN SEMICONDUCTOR MFG CO LTD
11 patentsUS12484232B2Nov 25, 2025
Ferroelectric memory device and method of fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12354633B2Jul 8, 2025
Spacer film scheme form polarization improvement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12119035B2Oct 15, 2024
Spacer film scheme for polarization improvement
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12160995B2Dec 3, 2024
Wakeup free approach to improve the ferroelectricity of FeRAM using a stressor layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12137572B2Nov 5, 2024
Ferroelectric memory device and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11737280B2Aug 22, 2023
Wakeup free approach to improve the ferroelectricity of FeRAM using a stressor layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12424579B2Sep 23, 2025
Integrated chip including an upper conductive structure having multilayer stack to decrease fabrication costs and increase performance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12369329B2Jul 22, 2025
Bottom-electrode interface structure for memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11973050B2Apr 30, 2024
Method for forming an upper conductive structure having multilayer stack to decrease fabrication costs and increase performance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11792996B2Oct 17, 2023
Bottom-electrode interface structure for memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12557566B2Feb 17, 2026
Semiconductor device having a switching layer including a compound having aluminum, oxygen, and nitrogen and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations54
SHIN ZU SHING CO LTD
5 patentsUS7533446B1May 19, 2009
Variable resistance hinge
SHIN ZU SHING CO LTD50 citations92
US7513014B2Apr 7, 2009
Hinge assembly
SHIN ZU SHING CO LTD31 citations92
US7345646B1Mar 18, 2008
Antenna hinge
SHIN ZU SHING CO LTD16 citations83
US7439932B2Oct 21, 2008
Antenna mounting bracket
SHIN ZU SHING CO LTD6 citations63
US7520540B2Apr 21, 2009
Cover latch
SHIN ZU SHING CO LTD6 citations62
IND TECH RES INST
4 patentsUS6303725B1Oct 16, 2001
Cyclic dione polymer
IND TECH RES INST11 citations72
US6670093B2Dec 30, 2003
Silicon-containing copolymer and photosensitive resin composition containing the same
IND TECH RES INST8 citations69
US6573024B2Jun 3, 2003
Ammonium salt of organic acid and resist composition containing the same
IND TECH RES INST2 citations57
US6380339B1Apr 30, 2002
Silicon-containing vinyl copolymer and resist composition containing the same
IND TECH RES INST3 citations57