Inventor

WANG YANGYUAN

CN17 patents

⚠️ This page may combine multiple inventors who share the name “WANG YANGYUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WANG YANGYUAN

UNIV BEIJING

Method for fabricating high aspect ratio MEMS device with integrated circuit on the same substrate using post-CMOS process

Self-adaptive composite tunneling field effect transistor and method for fabricating the same

Short-gate tunneling field effect transistor having non-uniformly doped vertical channel and fabrication method thereof

Strip-shaped gate tunneling field effect transistor with double-diffusion and a preparation method thereof

Strip-shaped gate-modulated tunneling field effect transistor and a preparation method thereof

Resistive memory and method for fabricating the same

Tunneling field effect transistor having a three-side source and fabrication method thereof

HUANG RU

Method for testing density and location of gate dielectric layer trap of semiconductor device

MOS transistor having combined-source structure with low power consumption and method for fabricating the same

Combined-source MOS transistor with comb-shaped gate, and method for manufacturing the same

Method for fabricating complementary tunneling field effect transistor based on standard CMOS IC process

Tunneling current amplification transistor

Method for testing trap density of gate dielectric layer in semiconductor device having no substrate contact

Programmable array of silicon nanowire field effect transistor and method for fabricating the same

LI MING

Charge pump circuit

CAI YIMAO

Resistive-switching memory and fabrication method thereof

HANGZHOU WEIMING XINKE TECH CO LTD

Logic circuit design method