Inventor
SASAKI TAKATOMO
JP53 patents
⚠️ This page may combine multiple inventors who share the name “SASAKI TAKATOMO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
8 patentsUS7176115B2Feb 13, 2007
Method of manufacturing Group III nitride substrate and semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD19 citations93
US7435295B2Oct 14, 2008
Method for producing compound single crystal and production apparatus for use therein
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11 citations84
US7381268B2Jun 3, 2008
Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations84
US7309534B2Dec 18, 2007
Group III nitride crystals usable as group III nitride substrate, method of manufacturing the same, and semiconductor device including the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD10 citations84
US7125801B2Oct 24, 2006
Method of manufacturing Group III nitride crystal substrate, etchant used in the method, Group III nitride crystal substrate, and semiconductor device including the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8 citations74
US7419545B2Sep 2, 2008
Method for producing silicon carbide (SiC) single crystal and silicon carbide (SiC) single crystal obtained by such method
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations63
US7255742B2Aug 14, 2007
Method of manufacturing Group III nitride crystals, method of manufacturing semiconductor substrate, Group III nitride crystals, semiconductor substrate, and electronic device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations63
US7361220B2Apr 22, 2008
Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD0 citations50
JAPAN SCIENCE & TECH CORP
5 patentsUS5998313ADec 7, 1999
Cesium-lithium borate crystal
JAPAN SCIENCE & TECH CORP28 citations93
US6843849B1Jan 18, 2005
Method and apparatus for growing high quality single crystal
JAPAN SCIENCE & TECH CORP12 citations84
US7006539B1Feb 28, 2006
Nonlinear optical crystal
JAPAN SCIENCE & TECH CORP8 citations74
US6551528B1Apr 22, 2003
Wavelength conversion crystal and method for generating laser beam, and apparatus for generating laser beam
JAPAN SCIENCE & TECH CORP9 citations74
US7029528B2Apr 18, 2006
Method for flattening surface of oxide crystal to ultra high degree
JAPAN SCIENCE & TECH CORP3 citations63
NGK INSULATORS LTD
4 patentsUS7833347B2Nov 16, 2010
Process and apparatus for producing nitride single crystal
NGK INSULATORS LTD7 citations73
US8025728B2Sep 27, 2011
Method for manufacturing single crystal of nitride
NGK INSULATORS LTD2 citations62
US7842133B2Nov 30, 2010
Single crystal growing method
NGK INSULATORS LTD2 citations62
US7815733B2Oct 19, 2010
Method for producing hexagonal boron nitride single crystal and hexagonal boron nitride single crystal
NGK INSULATORS LTD5 citations62
UNIV OSAKA
3 patentsUS7948673B2May 24, 2011
Optical wavelength conversion element having a cesium-lithium-borate crystal
UNIV OSAKA14 citations83
US4670117AJun 2, 1987
Electrodialytic method of growing water-soluble ionic crystal
UNIV OSAKA13 citations73
US7959729B2Jun 14, 2011
Method for producing group-III-element nitride single crystals and apparatus used therein
UNIV OSAKA2 citations63
IWAI MAKOTO
3 patentsUS9017479B2Apr 28, 2015
Nitride single crystal manufacturing apparatus
IWAI MAKOTO3 citations62
US8657955B2Feb 25, 2014
Melt composition for gallium nitride single crystal growth and method for growing gallium nitride single crystal
IWAI MAKOTO0 citations51
US8231729B2Jul 31, 2012
Apparatus for producing nitride single crystal
IWAI MAKOTO0 citations51
SHARP KK
2 patentsSUMITOMO ELECTRIC INDUSTRIES
2 patentsPANASONIC CORP
2 patentsUS7754012B2Jul 13, 2010
Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride
PANASONIC CORP6 citations74
US7794539B2Sep 14, 2010
Method for producing III group element nitride crystal, production apparatus for use therein, and semiconductor element produced thereby
PANASONIC CORP1 citations52
TOYODA GOSEI KK
2 patentsJAPAN RES DEV CORP
2 patentsUSTC UNIV SCIENCE TECH CN
2 patentsYAMAZAKI SHIRO
2 patentsOSAKA IND PROMOTION ORG
2 patentsUS7507292B2Mar 24, 2009
Method for producing group III element nitride single crystal and group III element nitride transparent single crystal prepared thereby
OSAKA IND PROMOTION ORG5 citations60
US7247203B2Jul 24, 2007
Process for producing crystalline nucleus and method of screening crystallization conditions
OSAKA IND PROMOTION ORG3 citations58
YUSUKE MORI
1 patentSHIBATA NAOKI
1 patentSHIMADZU CORP
1 patentMITSUBISHI ELECTRIC CORP
1 patentMORI YUSUKE
1 patentYAMADA OSAMU
1 patentISHIDA MASAYA
1 patentJAPAN SCIENCE & TECH AGENCY
1 patentIMAI KATSUHIRO
1 patentNAGAI SEIJI
1 patentICHIMURA MIKIYA
1 patentShowing the top 50 of 53 patents by PatentIndex Score.