Inventor
KAWAMURA FUMIO
JP77 patents
⚠️ This page may combine multiple inventors who share the name “KAWAMURA FUMIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI LTD
14 patentsUS5467444ANov 14, 1995
Method of three-dimensional display of object-oriented figure information and system thereof
HITACHI LTD86 citations96
US5448696ASep 5, 1995
Map information system capable of displaying layout information
HITACHI LTD143 citations95
US4654172AMar 31, 1987
Method for processing radioactive waste resin
HITACHI LTD31 citations92
US4636335AJan 13, 1987
Method of disposing radioactive ion exchange resin
HITACHI LTD27 citations92
US4448711AMay 15, 1984
Process for producing zeolite adsorbent and process for treating radioactive liquid waste with the zeolite adsorbent
HITACHI LTD32 citations92
US4578325AMar 25, 1986
Power storage system using sodium-sulfur batteries
HITACHI LTD20 citations79
US4587232AMay 6, 1986
Inorganic adsorbent and process for production thereof
HITACHI LTD8 citations74
US4505851AMar 19, 1985
Process for solidifying radioactive waste pellets
HITACHI LTD17 citations74
US4361505ANov 30, 1982
Process for treating radioactive waste
HITACHI LTD8 citations74
US4581162AApr 8, 1986
Process for solidifying radioactive waste
HITACHI LTD13 citations73
US4481089ANov 6, 1984
Method for decontaminating metals contaminated with radioactive substances
HITACHI LTD16 citations73
US5084235AJan 28, 1992
Direct cycle-type atomic power plant with means for suppressing transfer from a liquid phase to a vapor phase of radioactive nitrogen oxides
HITACHI LTD12 citations70
US4648990AMar 10, 1987
Solidified radioactive wastes and process for producing the same
HITACHI LTD4 citations63
US4524153AJun 18, 1985
Method of and system for regenerating powdery ion-exchange resin
HITACHI LTD3 citations63
RICOH KK
14 patentsUS5153073AOct 6, 1992
Electroluminescent device
RICOH KK80 citations96
US6261992B1Jul 17, 2001
Reversible thermosensitive recording material and recording method and apparatus therefor
RICOH KK33 citations92
US6154243ANov 28, 2000
Reversible thermal recording method and apparatus therefor
RICOH KK36 citations92
US6090748AJul 18, 2000
Reversible thermosensitive recording material and recording method and recording apparatus therefor
RICOH KK31 citations92
US5981115ANov 9, 1999
Reversible thermosensitive recording material
RICOH KK42 citations92
US5981429ANov 9, 1999
Reversible thermosensitive recording medium
RICOH KK25 citations92
US5118986AJun 2, 1992
Electroluminescent device
RICOH KK36 citations92
US5093210AMar 3, 1992
Electroluminescent device
RICOH KK32 citations92
US7580651B2Aug 25, 2009
Image forming apparatus and method of controlling energy saving mode
RICOH KK9 citations82
US5583088ADec 10, 1996
Reversible thermosensitive recording medium
RICOH KK10 citations74
US6090192AJul 18, 2000
Reversible thermosensitive coloring composition and reversible thermosensitive recording medium using same
RICOH KK15 citations73
US5955225ASep 21, 1999
Reversible thermosensitive coloring composition and reversible thermosensitive recording medium using same
RICOH KK14 citations73
US5891823AApr 6, 1999
Reversible thermosensitive recording medium
RICOH KK11 citations73
US5868821AFeb 9, 1999
Thermally reversible color forming composition and thermally reversible recording medium using the thermally reversible color forming composition
RICOH KK12 citations73
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
7 patentsUS7176115B2Feb 13, 2007
Method of manufacturing Group III nitride substrate and semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD19 citations93
US7435295B2Oct 14, 2008
Method for producing compound single crystal and production apparatus for use therein
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11 citations84
US7381268B2Jun 3, 2008
Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations84
US7309534B2Dec 18, 2007
Group III nitride crystals usable as group III nitride substrate, method of manufacturing the same, and semiconductor device including the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD10 citations84
US7125801B2Oct 24, 2006
Method of manufacturing Group III nitride crystal substrate, etchant used in the method, Group III nitride crystal substrate, and semiconductor device including the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8 citations74
US7419545B2Sep 2, 2008
Method for producing silicon carbide (SiC) single crystal and silicon carbide (SiC) single crystal obtained by such method
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations63
US7255742B2Aug 14, 2007
Method of manufacturing Group III nitride crystals, method of manufacturing semiconductor substrate, Group III nitride crystals, semiconductor substrate, and electronic device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations63
SUMITOMO ELECTRIC INDUSTRIES
2 patentsNIKKISO CO LTD
1 patentYUSUKE MORI
1 patentTOKYO ELECTRIC POWER CO
1 patentPANASONIC CORP
1 patentTOYODA GOSEI KK
1 patentNGK INSULATORS LTD
1 patentTOMOEGAWA PAPER CO LTD
1 patentFANUC LTD
1 patentKURITA WATER IND LTD
1 patentTOMOEGAWA PAPER MFG CO LTD
1 patentNAT INST MATERIALS SCIENCE
1 patentSHIBATA NAOKI
1 patentUNIV OSAKA
1 patentShowing the top 50 of 77 patents by PatentIndex Score.