P

Inventor

YOSHIMURA MASASHI

JP73 patents
⚠️ This page may combine multiple inventors who share the name “YOSHIMURA MASASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SUMITOMO ELECTRIC INDUSTRIES

12 patents
US5369065ANov 29, 1994

Silicon nitride sintered body and process for producing the same

SUMITOMO ELECTRIC INDUSTRIES32 citations92
US7905958B2Mar 15, 2011

Group III-nitride semiconductor crystal and manufacturing method thereof, and group III-nitride semiconductor device

SUMITOMO ELECTRIC INDUSTRIES10 citations84
US6844282B2Jan 18, 2005

Silicon nitride based composite sintered product and method for production thereof

SUMITOMO ELECTRIC INDUSTRIES6 citations74
US5459111AOct 17, 1995

Composite ceramics sintered body

SUMITOMO ELECTRIC INDUSTRIES8 citations74
US5424256AJun 13, 1995

Silicon nitride sintered body

SUMITOMO ELECTRIC INDUSTRIES17 citations73
US6599637B1Jul 29, 2003

Silicon nitride composite substrate

SUMITOMO ELECTRIC INDUSTRIES8 citations71
US7348286B2Mar 25, 2008

Ceramic composite material and method of its manufacture

SUMITOMO ELECTRIC INDUSTRIES3 citations63
US7288151B2Oct 30, 2007

Method of manufacturing group-III nitride crystal

SUMITOMO ELECTRIC INDUSTRIES2 citations63
US7132061B2Nov 7, 2006

Electroconductive silicon nitride based composite sintered body and method for preparation thereof

SUMITOMO ELECTRIC INDUSTRIES2 citations63
US7008893B2Mar 7, 2006

Silicon nitride-based composite sintered body and producing method thereof

SUMITOMO ELECTRIC INDUSTRIES2 citations63
US6911162B2Jun 28, 2005

Conductive silicon nitride composite sintered body and a process for the production thereof

SUMITOMO ELECTRIC INDUSTRIES3 citations63
US5585055ADec 17, 1996

Method of manufacturing a composite ceramics sintered body

SUMITOMO ELECTRIC INDUSTRIES2 citations63

UNIV OSAKA

9 patents
US7948673B2May 24, 2011

Optical wavelength conversion element having a cesium-lithium-borate crystal

UNIV OSAKA14 citations83
US9834859B2Dec 5, 2017

Method for producing group III nitride crystal, group III nitride crystal, and semiconductor device

UNIV OSAKA9 citations82
US11155931B2Oct 26, 2021

Method for manufacturing a group III-nitride crystal comprising supplying a group III-element oxide gas and a nitrogen element-containing gas at a supersaturation ratio of greater than 1 and equal to or less than 5

UNIV OSAKA2 citations71
US7959729B2Jun 14, 2011

Method for producing group-III-element nitride single crystals and apparatus used therein

UNIV OSAKA2 citations63
US10927476B2Feb 23, 2021

Production method for group III nitride crystal

UNIV OSAKA1 citations62
US11795573B2Oct 24, 2023

Method of manufacturing group III nitride crystal by reacting an oxidizing gas containing nitrogen with a group III element droplet and growing a group III nitride crystal on a seed substrate

UNIV OSAKA0 citations61
US11753739B2Sep 12, 2023

Method for manufacturing a group III-nitride crystal comprising supplying a group III-element oxide gas and a nitrogen element-containng gas at a supersation ratio of greater than 1 and equal to or less than 5

UNIV OSAKA0 citations61
US11396716B2Jul 26, 2022

Group-III nitride substrate containing carbon at a surface region thereof

UNIV OSAKA0 citations61
US10202710B2Feb 12, 2019

Process for producing group III nitride crystal and apparatus for producing group III nitride crystal

UNIV OSAKA1 citations60

TAIKO KIKAI IND CO LTD

5 patents

JAPAN SCIENCE & TECH CORP

4 patents

PANASONIC CORP

3 patents

KOMATSU MFG CO LTD

2 patents

BANDO CHEMICAL IND

2 patents

MAXELL HOLDINGS LTD

2 patents

VICTOR COMPANY OF JAPAN

1 patent

AGENCY IND SCIENCE TECHN

1 patent

TOYODA GOSEI KK

1 patent

DISCO CORP

1 patent

HITACHI MAXELL

1 patent

MAXELL LTD

1 patent

MITSUBISHI ELECTRIC CORP

1 patent

PANASONIC HOLDINGS CORP

1 patent

SATOH ISSEI

1 patent

MORI YUSUKE

1 patent

OSAKA IND PROMOTION ORG

1 patent

Showing the top 50 of 73 patents by PatentIndex Score.