Inventor
ZWIEBACK ILYA
US30 patents
⚠️ This page may combine multiple inventors who share the name “ZWIEBACK ILYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
II VI INC
10 patentsUS7608524B2Oct 27, 2009
Method of and system for forming SiC crystals having spatially uniform doping impurities
II VI INC22 citations91
US7767022B1Aug 3, 2010
Method of annealing a sublimation grown crystal
II VI INC53 citations90
US8361227B2Jan 29, 2013
Silicon carbide single crystals with low boron content
II VI INC9 citations84
US9090989B2Jul 28, 2015
Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof
II VI INC8 citations83
USRE46315EFeb 21, 2017
Large diameter, high quality SiC single crystals, method and apparatus
II VI INC2 citations72
US8741413B2Jun 3, 2014
Large diameter, high quality SiC single crystals, method and apparatus
II VI INC4 citations72
US9580837B2Feb 28, 2017
Method for silicon carbide crystal growth by reacting elemental silicon vapor with a porous carbon solid source material
II VI INC2 citations69
US7547360B2Jun 16, 2009
Reduction of carbon inclusions in sublimation grown SiC single crystals
II VI INC3 citations62
US9322110B2Apr 26, 2016
Vanadium doped SiC single crystals and method thereof
II VI INC2 citations60
US9388509B2Jul 12, 2016
Method for synthesizing ultrahigh-purity silicon carbide
II VI INC0 citations41
II VI DELAWARE INC
8 patentsUS10793972B1Oct 6, 2020
High quality silicon carbide crystals and method of making the same
II VI DELAWARE INC15 citations83
US11035054B2Jun 15, 2021
Large diameter silicon carbide single crystals and apparatus and method of manufacture thereof
II VI DELAWARE INC2 citations72
US11905618B2Feb 20, 2024
Large diameter silicon carbide single crystals and apparatus and method of manufacture thereof
II VI DELAWARE INC0 citations62
USRE48378EJan 5, 2021
Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof
II VI DELAWARE INC0 citations62
US12006591B2Jun 11, 2024
Method for preparing an aluminum doped silicon carbide crystal by providing a compound including aluminum and oxygen in a capsule comprised of a first and second material
II VI DELAWARE INC0 citations61
US11761117B2Sep 19, 2023
SiC single crystal sublimation growth apparatus
II VI DELAWARE INC0 citations60
US11149359B2Oct 19, 2021
SiC single crystal sublimation growth apparatus
II VI DELAWARE INC0 citations60
US12060650B2Aug 13, 2024
Vanadium-compensated 4H and 6H single crystals of optical grade, and silicon carbide crystals and methods for producing same
II VI DELAWARE INC0 citations56
ZWIEBACK ILYA
4 patentsUS8858709B1Oct 14, 2014
Silicon carbide with low nitrogen content and method for preparation
ZWIEBACK ILYA26 citations91
US8512471B2Aug 20, 2013
Halosilane assisted PVT growth of SiC
ZWIEBACK ILYA11 citations83
US9017629B2Apr 28, 2015
Intra-cavity gettering of nitrogen in SiC crystal growth
ZWIEBACK ILYA6 citations71
US8313720B2Nov 20, 2012
Guided diameter SiC sublimation growth with multi-layer growth guide
ZWIEBACK ILYA5 citations61