Inventor

GUPTA AVINASH K

US19 patents

⚠️ This page may combine multiple inventors who share the name “GUPTA AVINASH K”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GUPTA AVINASH K

II VI INC

Method of and system for forming SiC crystals having spatially uniform doping impurities

Method of annealing a sublimation grown crystal

Silicon carbide single crystals with low boron content

Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof

Large diameter, high quality SiC single crystals, method and apparatus

Large diameter, high quality SiC single crystals, method and apparatus

Reduction of carbon inclusions in sublimation grown SiC single crystals

Vanadium doped SiC single crystals and method thereof

Method for synthesizing ultrahigh-purity silicon carbide

ZWIEBACK ILYA

Silicon carbide with low nitrogen content and method for preparation

Halosilane assisted PVT growth of SiC

Intra-cavity gettering of nitrogen in SiC crystal growth

Guided diameter SiC sublimation growth with multi-layer growth guide

SOLAR REACTOR TECH

Hydrogen generation and utility load leveling system and the method therefor

Closed loop regeneration system for generating mechanical energy and the method therefor

GUPTA AVINASH K

System for forming SiC crystals having spatially uniform doping impurities

SiC single crystal sublimation growth method and apparatus

II VI DELAWARE INC

Large diameter silicon carbide single crystals and apparatus and method of manufacture thereof

Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof