Inventor
WU CHAO-I
TW155 patents
⚠️ This page may combine multiple inventors who share the name “WU CHAO-I”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MACRONIX INT CO LTD
31 patentsUS7151692B2Dec 19, 2006
Operation scheme for programming charge trapping non-volatile memory
MACRONIX INT CO LTD154 citations99
US7209390B2Apr 24, 2007
Operation scheme for spectrum shift in charge trapping non-volatile memory
MACRONIX INT CO LTD111 citations98
US7190614B2Mar 13, 2007
Operation scheme for programming charge trapping non-volatile memory
MACRONIX INT CO LTD149 citations98
US6937511B2Aug 30, 2005
Circuit and method for programming charge storage memory cells
MACRONIX INT CO LTD143 citations98
US7266014B2Sep 4, 2007
Method of operating non-volatile memory device
MACRONIX INT CO LTD58 citations96
US7590005B2Sep 15, 2009
Program and erase methods with substrate transient hot carrier injections in a non-volatile memory
MACRONIX INT CO LTD16 citations93
US7492636B2Feb 17, 2009
Methods for conducting double-side-biasing operations of NAND memory arrays
MACRONIX INT CO LTD20 citations93
US7206225B2Apr 17, 2007
Method of dynamically controlling program verify levels in multilevel memory cells
MACRONIX INT CO LTD19 citations93
US7085165B2Aug 1, 2006
Method and apparatus for reducing read disturb in non-volatile memory
MACRONIX INT CO LTD20 citations93
US9558823B1Jan 31, 2017
Resistance drift recovery method for MLC PCM
MACRONIX INT CO LTD37 citations92
US8908426B2Dec 9, 2014
Cell sensing circuit for phase change memory and methods thereof
MACRONIX INT CO LTD19 citations92
US9336879B2May 10, 2016
Multiple phase change materials in an integrated circuit for system on a chip application
MACRONIX INT CO LTD11 citations84
US8363463B2Jan 29, 2013
Phase change memory having one or more non-constant doping profiles
MACRONIX INT CO LTD16 citations84
US7881112B2Feb 1, 2011
Program and erase methods with substrate transient hot carrier injections in a non-volatile memory
MACRONIX INT CO LTD7 citations84
US7817472B2Oct 19, 2010
Operating method of memory device
MACRONIX INT CO LTD9 citations84
US7763927B2Jul 27, 2010
Non-volatile memory device having a nitride-oxide dielectric layer
MACRONIX INT CO LTD10 citations84
US7548458B2Jun 16, 2009
Methods of biasing a multi-level-cell memory
MACRONIX INT CO LTD10 citations84
US7471568B2Dec 30, 2008
Multi-level cell memory structures with enlarged second bit operation window
MACRONIX INT CO LTD17 citations84
US7411836B2Aug 12, 2008
Method of operating non-volatile memory
MACRONIX INT CO LTD10 citations84
US7372732B2May 13, 2008
Pulse width converged method to control voltage threshold (Vt) distribution of a memory cell
MACRONIX INT CO LTD13 citations84
US7038928B1May 2, 2006
Method of determining optimal voltages for operating two-side non-volatile memory and the operating methods
MACRONIX INT CO LTD13 citations84
US6890819B2May 10, 2005
Methods for forming PN junction, one-time programmable read-only memory and fabricating processes thereof
MACRONIX INT CO LTD16 citations84
US7292478B2Nov 6, 2007
Non-volatile memory including charge-trapping layer, and operation and fabrication of the same
MACRONIX INT CO LTD11 citations79
US7145809B1Dec 5, 2006
Method for programming multi-level cell
MACRONIX INT CO LTD9 citations74
US7085168B2Aug 1, 2006
Programming method for controlling memory threshold voltage distribution
MACRONIX INT CO LTD10 citations74
US6952038B2Oct 4, 2005
3D polysilicon ROM and method of fabrication thereof
MACRONIX INT CO LTD7 citations74
US9627054B2Apr 18, 2017
Memory operating method for increasing cell capacity based on resistance characteristic of memory and associated memory device
MACRONIX INT CO LTD4 citations73
US9620210B2Apr 11, 2017
Method and apparatus for healing phase change memory devices
MACRONIX INT CO LTD2 citations73
US9373382B1Jun 21, 2016
Method for healing phase-change memory device and applications thereof
MACRONIX INT CO LTD4 citations73
US9336878B2May 10, 2016
Method and apparatus for healing phase change memory devices
MACRONIX INT CO LTD4 citations73
US8374019B2Feb 12, 2013
Phase change memory with fast write characteristics
MACRONIX INT CO LTD6 citations73
TAIWAN SEMICONDUCTOR MFG CO LTD
13 patentsUS11502128B2Nov 15, 2022
Memory device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations86
US11411011B2Aug 9, 2022
Semiconductor structure having memory device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11862219B2Jan 2, 2024
Memory cell and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations75
US11637126B2Apr 25, 2023
Memory device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations75
US11616080B2Mar 28, 2023
Three-dimensional memory device with ferroelectric material
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US11980036B2May 7, 2024
Semiconductor structure having memory device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11956968B2Apr 9, 2024
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11749370B2Sep 5, 2023
Method of testing a memory circuit and memory circuit
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11672126B2Jun 6, 2023
Three-dimensional memory device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11587950B2Feb 21, 2023
Memory device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11568912B2Jan 31, 2023
Memory cell and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11444126B2Sep 13, 2022
Memory device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11309490B2Apr 19, 2022
Memory devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
JAN SPORTS PRODUCTS CORP
2 patentsLUNG HSIANG-LAN
1 patentSHIH YEN-HAO
1 patentDU PEI-YING
1 patentJAN FENG SPORTS PRODUCTS CORP
1 patentShowing the top 50 of 155 patents by PatentIndex Score.