Inventor
HWANG YOUNGNAM
KR22 patents
⚠️ This page may combine multiple inventors who share the name “HWANG YOUNGNAM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
16 patentsUS11881260B2Jan 23, 2024
Neuromorphic computing device and method of designing the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US11302392B2Apr 12, 2022
Analog-to-digital converter and neuromorphic computing device including the same
SAMSUNG ELECTRONICS CO LTD3 citations72
US11176993B2Nov 16, 2021
Synapse element increasing a dynamic range of an output while suppressing and/or decreasing power consumption, and a neuromorphic processor including the synapse element
SAMSUNG ELECTRONICS CO LTD2 citations72
US11012075B2May 18, 2021
Electronic system including FPGA and operation method thereof
SAMSUNG ELECTRONICS CO LTD2 citations70
US12488227B2Dec 2, 2025
Neuromorphic computing device and operating method thereof
SAMSUNG ELECTRONICS CO LTD0 citations62
US12340831B2Jun 24, 2025
Memory device including three-dimensional racetrack and operating method thereof
SAMSUNG ELECTRONICS CO LTD0 citations62
US8824195B2Sep 2, 2014
Methods of forming phase-change memory devices and devices so formed
SAMSUNG ELECTRONICS CO LTD2 citations62
US11232038B2Jan 25, 2022
Ternary content addressable memory and operating method thereof
SAMSUNG ELECTRONICS CO LTD1 citations61
US10818347B2Oct 27, 2020
Semiconductor memory device for supporting operation of neural network and operating method of semiconductor memory device
SAMSUNG ELECTRONICS CO LTD1 citations61
US11967952B2Apr 23, 2024
Electronic system including FPGA and operation method thereof
SAMSUNG ELECTRONICS CO LTD0 citations60
US12456042B2Oct 28, 2025
Neuromorphic computing device and method of operating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US12277961B2Apr 15, 2025
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US12254945B2Mar 18, 2025
Neuromorphic device
SAMSUNG ELECTRONICS CO LTD0 citations51
US12229660B2Feb 18, 2025
Crossbar array apparatuses based on compressed-truncated singular value decomposition (C-TSVD) and analog multiply-accumulate (MAC) operation methods using the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US8765521B2Jul 1, 2014
Variable resistance memory devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US12039288B2Jul 16, 2024
Method and apparatus with data processing
SAMSUNG ELECTRONICS CO LTD0 citations50
HWANG YOUNGNAM
4 patentsUS8822969B2Sep 2, 2014
Semiconductor memory devices and methods of forming the same
HWANG YOUNGNAM35 citations93
US9093370B2Jul 28, 2015
Memory devices with three-dimensional selection structures for memory cell arrays
HWANG YOUNGNAM17 citations82
US8551840B2Oct 8, 2013
Methods of forming phase-change memory devices and devices so formed
HWANG YOUNGNAM9 citations82
US8644061B2Feb 4, 2014
Variable resistance memory device performing program and verification operation
HWANG YOUNGNAM5 citations68