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Inventor

BONO HUBERT

FR33 patents
⚠️ This page may combine multiple inventors who share the name “BONO HUBERT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

COMMISSARIAT ENERGIE ATOMIQUE

22 patents
US9601542B2Mar 21, 2017

P-N junction optoelectronic device for ionizing dopants by field effect

COMMISSARIAT ENERGIE ATOMIQUE31 citations94
US5750420AMay 12, 1998

Method for manufacturing a structure with a useful layer held at a distance from a substrate by abutments, and for detaching such a layer

COMMISSARIAT ENERGIE ATOMIQUE37 citations91
US6344647B1Feb 5, 2002

Miniaturized photoacoustic spectrometer

COMMISSARIAT ENERGIE ATOMIQUE44 citations90
US9960152B2May 1, 2018

Optoelectronic device with light-emitting diodes comprising at least one zener diode

COMMISSARIAT ENERGIE ATOMIQUE11 citations84
US10468452B2Nov 5, 2019

Method of manufacturing a LED-based emissive display device

COMMISSARIAT ENERGIE ATOMIQUE3 citations73
US10468436B2Nov 5, 2019

Method of manufacturing a LED matrix display device

COMMISSARIAT ENERGIE ATOMIQUE5 citations73
US9967937B2May 8, 2018

Light-emitting device

COMMISSARIAT ENERGIE ATOMIQUE2 citations73
US11658260B2May 23, 2023

Method of manufacturing an optoelectronic device comprising a plurality of diodes

COMMISSARIAT ENERGIE ATOMIQUE2 citations72
US10396239B2Aug 27, 2019

Optoelectronic light-emitting device

COMMISSARIAT ENERGIE ATOMIQUE2 citations72
US11923477B2Mar 5, 2024

Method for manufacturing an electronic device

COMMISSARIAT ENERGIE ATOMIQUE0 citations62
US11075192B2Jul 27, 2021

Microelectronic diode with optimised active surface

COMMISSARIAT ENERGIE ATOMIQUE1 citations62
US11444118B2Sep 13, 2022

Method of manufacturing an optoelectronic device comprising a plurality of diodes

COMMISSARIAT ENERGIE ATOMIQUE1 citations60
US12217964B2Feb 4, 2025

Doped semiconductor layer forming method

COMMISSARIAT ENERGIE ATOMIQUE0 citations54
US11532768B2Dec 20, 2022

Optoelectronic device including a gate and a cathode coupled to one another

COMMISSARIAT ENERGIE ATOMIQUE0 citations52
US10944025B2Mar 9, 2021

Light-emitting diode with multiple quantum wells and asymmetric p-n junction

COMMISSARIAT ENERGIE ATOMIQUE0 citations52
US9608037B2Mar 28, 2017

Mesa structure diode with approximately plane contact surface

COMMISSARIAT ENERGIE ATOMIQUE1 citations52
US11552125B2Jan 10, 2023

Method of manufacturing an optoelectronic device comprising a plurality of diodes and an electronic circuit for controlling these diodes

COMMISSARIAT ENERGIE ATOMIQUE0 citations51
US10475849B2Nov 12, 2019

Device comprising a plurality of diodes

COMMISSARIAT ENERGIE ATOMIQUE0 citations51
US10361247B2Jul 23, 2019

Device comprising a plurality of diodes

COMMISSARIAT ENERGIE ATOMIQUE0 citations51
US10115864B2Oct 30, 2018

Optoelectronic device with light-emitting diodes and an improved radiation pattern

COMMISSARIAT ENERGIE ATOMIQUE0 citations51
US12278224B2Apr 15, 2025

Method for producing nitride mesas each intended to form an electronic or optoelectronic device

COMMISSARIAT ENERGIE ATOMIQUE0 citations47
US9214341B2Dec 15, 2015

Method for manufacturing a semiconductor structure and semiconductor component comprising such a structure

COMMISSARIAT ENERGIE ATOMIQUE0 citations41

Aledia

4 patents

COMMISSARIAT A IENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

2 patents

COMMISSARIAT L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

2 patents

ELA MEDICAL SA

1 patent

Commissariat â l'Energie Atomique et aux Energies Alternatives

1 patent

COMMISSARIAT A LENEGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

1 patent