Inventor
STENGL REINHARD J
DE9 patents
⚠️ This page may combine multiple inventors who share the name “STENGL REINHARD J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SIEMENS AG
7 patentsUS5627092AMay 6, 1997
Deep trench dram process on SOI for low leakage DRAM cell
SIEMENS AG257 citations98
US5804499ASep 8, 1998
Prevention of abnormal WSix oxidation by in-situ amorphous silicon deposition
SIEMENS AG53 citations96
US5893735AApr 13, 1999
Three-dimensional device layout with sub-groundrule features
SIEMENS AG34 citations92
US5792685AAug 11, 1998
Three-dimensional device layout having a trench capacitor
SIEMENS AG39 citations92
US5674769AOct 7, 1997
Process for forming deep trench DRAMs with sub-groundrule gates
SIEMENS AG39 citations92
US5663107ASep 2, 1997
Global planarization using self aligned polishing or spacer technique and isotropic etch process
SIEMENS AG26 citations89
US6383864B2May 7, 2002
Memory cell for dynamic random access memory (DRAM)
SIEMENS AG15 citations79