Inventor
HAMMERL ERWIN
DE18 patents
⚠️ This page may combine multiple inventors who share the name “HAMMERL ERWIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SIEMENS AG
10 patentsUS5827765AOct 27, 1998
Buried-strap formation in a dram trench capacitor
SIEMENS AG81 citations96
US5656535AAug 12, 1997
Storage node process for deep trench-based DRAM
SIEMENS AG42 citations95
US5747866AMay 5, 1998
Application of thin crystalline Si3 N4 liners in shallow trench isolation (STI) structures
SIEMENS AG41 citations94
US5643823AJul 1, 1997
Application of thin crystalline Si3 N4 liners in shallow trench isolation (STI) structures
SIEMENS AG45 citations93
US5893735AApr 13, 1999
Three-dimensional device layout with sub-groundrule features
SIEMENS AG34 citations92
US5844266ADec 1, 1998
Buried strap formation in a DRAM trench capacitor
SIEMENS AG32 citations92
US5828076AOct 27, 1998
Microelectronic component and process for its production
SIEMENS AG32 citations92
US5792685AAug 11, 1998
Three-dimensional device layout having a trench capacitor
SIEMENS AG39 citations92
US5674769AOct 7, 1997
Process for forming deep trench DRAMs with sub-groundrule gates
SIEMENS AG39 citations92
US5717628AFeb 10, 1998
Nitride cap formation in a DRAM trench capacitor
SIEMENS AG26 citations89
IBM
5 patentsUS5447884ASep 5, 1995
Shallow trench isolation with thin nitride liner
IBM264 citations97
US6140208AOct 31, 2000
Shallow trench isolation (STI) with bilayer of oxide-nitride for VLSI applications
IBM72 citations95
US6153474ANov 28, 2000
Method of controllably forming a LOCOS oxide layer over a portion of a vertically extending sidewall of a trench extending into a semiconductor substrate
IBM28 citations92
US5937292AAug 10, 1999
Nitride cap formation in a DRAM trench capacitor
IBM30 citations89
US5899724AMay 4, 1999
Method for fabricating a titanium resistor
IBM26 citations89