Inventor
OZCAN AHMET S
US76 patents
⚠️ This page may combine multiple inventors who share the name “OZCAN AHMET S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
41 patentsUS8603881B1Dec 10, 2013
Raised trench metal semiconductor alloy formation
IBM19 citations92
US10269714B2Apr 23, 2019
Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements
IBM4 citations84
US9093425B1Jul 28, 2015
Self-aligned liner formed on metal semiconductor alloy contacts
IBM6 citations84
US8796099B2Aug 5, 2014
Inducing channel strain via encapsulated silicide formation
IBM7 citations84
US8349716B2Jan 8, 2013
Semiconductor device with reduced junction leakage and an associated method of forming such a semiconductor device
IBM7 citations84
US8030154B1Oct 4, 2011
Method for forming a protection layer over metal semiconductor contact and structure formed thereon
IBM15 citations84
US8614107B2Dec 24, 2013
Liner-free tungsten contact
IBM8 citations83
US7993987B1Aug 9, 2011
Surface cleaning using sacrificial getter layer
IBM8 citations83
US7759208B1Jul 20, 2010
Low temperature ion implantation for improved silicide contacts
IBM14 citations83
US11101219B2Aug 24, 2021
Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements
IBM3 citations73
US11062956B2Jul 13, 2021
Low resistance source-drain contacts using high temperature silicides
IBM1 citations73
US10985105B2Apr 20, 2021
Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements
IBM3 citations73
US10943988B2Mar 9, 2021
Thermally stable salicide formation for salicide first contacts
IBM1 citations73
US10937889B2Mar 2, 2021
Forming thermally stable salicide for salicide first contacts
IBM1 citations73
US10825740B2Nov 3, 2020
Low resistance source-drain contacts using high temperature silicides
IBM1 citations73
US10685888B2Jun 16, 2020
Low resistance source-drain contacts using high temperature silicides
IBM3 citations73
US10546941B2Jan 28, 2020
Forming thermally stable salicide for salicide first contacts
IBM3 citations73
US10453935B2Oct 22, 2019
Thermally stable salicide formation for salicide first contacts
IBM1 citations73
US9882005B2Jan 30, 2018
Fully depleted silicon-on-insulator device formation
IBM4 citations73
US9559202B2Jan 31, 2017
Method for forming metal semiconductor alloys in contact holes and trenches
IBM2 citations73
US10423877B2Sep 24, 2019
High memory bandwidth neuromorphic computing system
IBM3 citations72
US9786547B2Oct 10, 2017
Channel silicon germanium formation method
IBM2 citations72
US11088033B2Aug 10, 2021
Low resistance source-drain contacts using high temperature silicides
IBM0 citations63
US10930780B2Feb 23, 2021
Low parasitic capacitance and resistance finFET device
IBM0 citations63
US8021971B2Sep 20, 2011
Structure and method to form a thermally stable silicide in narrow dimension gate stacks
IBM3 citations63
US8013419B2Sep 6, 2011
Structure and method to form dual silicide e-fuse
IBM2 citations63
US12062614B2Aug 13, 2024
Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements
IBM0 citations62
US11862567B2Jan 2, 2024
Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements
IBM0 citations62
US11556343B2Jan 17, 2023
Computational method for temporal pooling and correlation
IBM0 citations62
US11100396B2Aug 24, 2021
Self-adjusting threshold for synaptic activity in neural networks
IBM0 citations62
US9230857B2Jan 5, 2016
Method to improve semiconductor surfaces and polishing
IBM2 citations59
US10546809B2Jan 28, 2020
Wafer-scale power delivery
IBM0 citations52
US10374088B2Aug 6, 2019
Low parasitic capacitance and resistance finFET device
IBM0 citations52
US10243046B2Mar 26, 2019
Fully depleted silicon-on-insulator device formation
IBM0 citations52
US10147676B1Dec 4, 2018
Wafer-scale power delivery
IBM1 citations52
US10079148B2Sep 18, 2018
Material removal process for self-aligned contacts
IBM0 citations52
US9947747B2Apr 17, 2018
Fully depleted silicon-on-insulator device formation
IBM0 citations52
US9929016B2Mar 27, 2018
Material removal process for self-aligned contacts
IBM0 citations52
US9761455B2Sep 12, 2017
Material removal process for self-aligned contacts
IBM0 citations52
US9735268B2Aug 15, 2017
Method for forming metal semiconductor alloys in contact holes and trenches
IBM0 citations52
US9553157B2Jan 24, 2017
Diffusion-controlled oxygen depletion of semiconductor contact interface
IBM0 citations52
GLOBALFOUNDRIES INC
4 patentsUS9379012B2Jun 28, 2016
Oxide mediated epitaxial nickel disilicide alloy contact formation
GLOBALFOUNDRIES INC7 citations84
US9236345B2Jan 12, 2016
Oxide mediated epitaxial nickel disilicide alloy contact formation
GLOBALFOUNDRIES INC6 citations84
US10707167B2Jul 7, 2020
Contacts to semiconductor substrate and methods of forming same
GLOBALFOUNDRIES INC0 citations52
US9865546B2Jan 9, 2018
Contacts to semiconductor substrate and methods of forming same
GLOBALFOUNDRIES INC0 citations52
LAVOIE CHRISTIAN
3 patentsDE SOUZA JOEL P
1 patentSAMSUNG ELECTRONICS CO LTD
1 patentShowing the top 50 of 76 patents by PatentIndex Score.