Inventor

OKAHISA TAKUJI

JP47 patents

⚠️ This page may combine multiple inventors who share the name “OKAHISA TAKUJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

OKAHISA TAKUJI

SUMITOMO ELECTRIC INDUSTRIES

Nitride semiconductor wafer

Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate

GaN single crystal substrate and method of making the same

Method of producing a single crystal gallium nitride substrate and single crystal gallium nitride substrate

Method of growing single crystal GaN, method of making single crystal GaN substrate and single crystal GaN substrate

GaN single crystal substrate and method of producing same

AlxInyGa1−x−yN mixture crystal substrate

Single crystal GaN substrate, method of growing same and method of producing same

AlxInyGa1-x-yN mixture crystal substrate, method of growing AlxInyGa1-x-yN mixture crystal substrate and method of producing AlxInyGa1-x-yN mixture crystal substrate

Single crystal GaN substrate semiconductor device

Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate

Fabrication method and fabrication apparatus of group III nitride crystal substance

Process for vapor phase epitaxy of compound semiconductor

Manufacturing method of nitride substrate, nitride substrate, and nitride-based semiconductor device

Epitaxial substrate and semiconductor element

GaN single crystal substrate and method of making the same

Method of manufacturing GaN crystal substrate

Gallium-nitride deposition substrate, method of manufacturing gallium-nitride deposition substrate, and method of manufacturing gallium nitride substrate

GaN single crystal substrate and method of making the same

Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate

Method of manufacturing diamond substrate, diamond substrate, and diamond composite substrate

Epitaxial wafer and method of preparing the same

Composite of III-nitride crystal on laterally stacked substrates

Method of manufacturing III-nitride crystal

Fabrication method and fabrication apparatus of group III nitride crystal substance

Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate

Growth method of GaN crystal, and GaN crystal substrate

Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate

Method of manufacturing diamond substrate, diamond substrate, and diamond composite substrate

Method of manufacturing diamond substrate, diamond substrate, and diamond composite substrate

Method of manufacturing diamond substrate, diamond substrate, and diamond composite substrate

GaN-crystal free-standing substrate and method for producing the same

Composite of III-nitride crystal on laterally stacked substrates

GaN single crystal substrate and method of making the same

AlxGayIn1−x−yN crystal substrate, semiconductor device, and method of manufacturing the same

OKAHISA TAKUJI

Group III nitride semiconductor substrate and manufacturing method thereof

Manufacturing method of nitride substrate, nitride substrate, and nitride-based semiconductor device

Group III nitride semiconductor crystal substrate and semiconductor device

III-nitride single-crystal ingot, III-nitride single-crystal substrate, method of manufacturing III-nitride single-crystal ingot, and method of manufacturing III-nitride single-crystal substrate

MIZUHARA NAHO

Group-III nitride crystal composite

Method of manufacturing III-nitride crystal, and semiconductor device utilizing the crystal

NAKAHATA SEIJI

AlxInyGal-x-yN mixture crystal substrate, method of growing same and method of producing same

AlxInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same

SUMITO ELECTRIC IND LTD

A1xInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same

KASAI HITOSHI

Fabrication method and fabrication apparatus of group III nitride crystal substance

UEMURA TOMOKI

Method for manufacturing gallium nitride crystal and gallium nitride wafer

FUJIWARA SHINSUKE

GaN-crystal free-standing substrate and method for producing the same