Inventor · disambiguated record
Ferdinand Scholz
Also filed as: SCHOLZ FERDINAND
9 granted patents·2 pending applications·302 citations·filing 2002–2019
86Inventor score
Files withFREIBERGER COMPOUND MAT GMBH6OSRAM OPTO SEMICONDUCTORS GMBH2SCHOLZ FERDINAND2WUNDERER THOMAS1
Top patents by PatentIndex Score
11 records- 0195US7727332B2Process for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices, and products obtained therebyFREIBERGER COMPOUND MAT GMBH·Filed 2006·Granted Jun 1, 2010·267 cites·20 claims
- 0283US8536030B2Semipolar semiconductor crystal and method for manufacturing the sameWUNDERER THOMAS·Filed 2011·Granted Sep 17, 2013·4 cites·20 claims
- 0379US9461121B2Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as suchFREIBERGER COMPOUND MAT GMBH·Filed 2014·Granted Oct 4, 2016·4 cites·18 claims
- 0472US7005681B2Radiation-emitting semiconductor component and method for making sameOSRAM OPTO SEMICONDUCTORS GMBH·Filed 2002·Granted Feb 28, 2006·23 cites·27 claims
- 0567US10309037B2Method for producing III-N templates and the reprocessing thereof and III-N templateFREIBERGER COMPOUND MAT GMBH·Filed 2013·Granted Jun 4, 2019·1 cites·17 claims
- 0666US7998273B2Method for producing III-N layers, and III-N layers or III-N substrates, and devices based thereonFREIBERGER COMPOUND MAT GMBH·Filed 2006·Granted Aug 16, 2011·2 cites·18 claims
- 0763US10883191B2Method for producing III-N templates and the reprocessing thereof and III-N templateFREIBERGER COMPOUND MAT GMBH·Filed 2019·Granted Jan 5, 2021·0 cites·14 claims
- 0856US8778078B2Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as suchSCHOLZ FERDINAND·Filed 2007·Granted Jul 15, 2014·1 cites·25 claims
- 0950US2008203409A1PROCESS FOR PRODUCING (Al, Ga)N CRYSTALSFREIBERGER COMPOUND MAT GMBH·Filed 2008·Application pending·0 cites
- 1045US9115444B2Method for producing III-N layers, and III-N layers or III-N substrates, and devices based thereonSCHOLZ FERDINAND·Filed 2010·Granted Aug 25, 2015·0 cites·13 claims
- 1137US2006060833A1Radiation-emitting optoelectronic component with a quantum well structure and method for producing itOSRAM OPTO SEMICONDUCTORS GMBH·Filed 2005·Application pending·0 cites
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