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Inventor

YANG GUANGJUN

CN39 patents
⚠️ This page may combine multiple inventors who share the name “YANG GUANGJUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MICRON TECHNOLOGY INC

21 patents
US9754946B1Sep 5, 2017

Methods of forming an elevationally extending conductor laterally between a pair of conductive lines

MICRON TECHNOLOGY INC30 citations94
US11239242B2Feb 1, 2022

Integrated assemblies having dielectric regions along conductive structures, and methods of forming integrated assemblies

MICRON TECHNOLOGY INC5 citations83
US10546862B1Jan 28, 2020

Integrated assemblies having spacers of low permittivity along digit-lines, and methods of forming integrated assemblies

MICRON TECHNOLOGY INC8 citations83
US10418275B1Sep 17, 2019

Methods of sealing openings, and methods of forming integrated assemblies

MICRON TECHNOLOGY INC4 citations73
US10290534B1May 14, 2019

Methods of sealing openings, and methods of forming integrated assemblies

MICRON TECHNOLOGY INC2 citations73
US10347643B1Jul 9, 2019

Methods of forming integrated assemblies having dielectric regions along conductive structures

MICRON TECHNOLOGY INC2 citations72
US10707215B2Jul 7, 2020

Methods of forming semiconductor devices, and related semiconductor devices, memory devices, and electronic systems

MICRON TECHNOLOGY INC2 citations71
US12363888B2Jul 15, 2025

Memory circuitry and method used in forming memory circuitry

MICRON TECHNOLOGY INC0 citations62
US11785762B2Oct 10, 2023

Memory circuitry and method used in forming memory circuitry

MICRON TECHNOLOGY INC0 citations62
US11502085B2Nov 15, 2022

Integrated memory with redistribution of capacitor connections, and methods of forming integrated memory

MICRON TECHNOLOGY INC0 citations62
US11393688B2Jul 19, 2022

Semiconductor contact formation

MICRON TECHNOLOGY INC1 citations62
US10978295B2Apr 13, 2021

Epitaxial growth on semiconductor structures

MICRON TECHNOLOGY INC0 citations61
US11239240B2Feb 1, 2022

Methods of forming a semiconductor device

MICRON TECHNOLOGY INC0 citations60
US11476255B2Oct 18, 2022

Method used in forming an array of vertical transistors and method used in forming an array of memory cells individually comprising a vertical transistor and a storage device above the vertical transistor

MICRON TECHNOLOGY INC0 citations52
US10957549B2Mar 23, 2021

Methods of forming semiconductor devices using mask materials, and related semiconductor devices and systems

MICRON TECHNOLOGY INC0 citations52
US10790185B2Sep 29, 2020

Methods of sealing openings, and methods of forming integrated assemblies

MICRON TECHNOLOGY INC0 citations52
US10134741B2Nov 20, 2018

Methods of forming an elevationally extending conductor laterally between a pair of conductive lines

MICRON TECHNOLOGY INC0 citations52
US10700073B2Jun 30, 2020

Integrated assemblies having dielectric regions along conductive structures, and methods of forming integrated assemblies

MICRON TECHNOLOGY INC0 citations51
US10665665B2May 26, 2020

Passivation material for a pillar adjacent a trench

MICRON TECHNOLOGY INC0 citations51
US11563008B2Jan 24, 2023

Integrated memory with redistribution of capacitor connections, and methods of forming integrated memory

MICRON TECHNOLOGY INC0 citations49
US9105587B2Aug 11, 2015

Methods of forming semiconductor structures with sulfur dioxide etch chemistries

MICRON TECHNOLOGY INC0 citations41

SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP

12 patents
US9640252B1May 2, 2017

Method of operating flash memory unit

SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP7 citations84
US11450387B2Sep 20, 2022

Method of controlling internal address for a serial nor flash memory

SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP0 citations52
US11114937B2Sep 7, 2021

Charge pump circuit

SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP0 citations52
US10957399B2Mar 23, 2021

Memory and operation method thereof

SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP0 citations52
US9337723B2May 10, 2016

Charge pump system and memory

SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP0 citations42
US10319448B2Jun 11, 2019

Circuits and methods of reference-current generation for flash

SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP0 citations41
US9525340B1Dec 20, 2016

Boost capacitor circuit and charge pump

SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP0 citations41
US9520202B1Dec 13, 2016

Programming verification control circuit and method for control thereof

SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP0 citations41
US9396801B1Jul 19, 2016

Memory, and erasing method, programming method and reading method thereof

SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP0 citations41
US9030891B2May 12, 2015

Charge pump circuit and memory

SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP0 citations41
US9013230B2Apr 21, 2015

Charge pump circuit

SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP0 citations41
US9406685B2Aug 2, 2016

Flash memory unit and memory array, and programming, erasing and reading method thereof

SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP0 citations40

YANG GUANGJUN

4 patents

GRACE SEMICONDUCTOR MFG CORP

2 patents