Inventor
YANG GUANGJUN
CN39 patents
⚠️ This page may combine multiple inventors who share the name “YANG GUANGJUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
21 patentsUS9754946B1Sep 5, 2017
Methods of forming an elevationally extending conductor laterally between a pair of conductive lines
MICRON TECHNOLOGY INC30 citations94
US11239242B2Feb 1, 2022
Integrated assemblies having dielectric regions along conductive structures, and methods of forming integrated assemblies
MICRON TECHNOLOGY INC5 citations83
US10546862B1Jan 28, 2020
Integrated assemblies having spacers of low permittivity along digit-lines, and methods of forming integrated assemblies
MICRON TECHNOLOGY INC8 citations83
US10418275B1Sep 17, 2019
Methods of sealing openings, and methods of forming integrated assemblies
MICRON TECHNOLOGY INC4 citations73
US10290534B1May 14, 2019
Methods of sealing openings, and methods of forming integrated assemblies
MICRON TECHNOLOGY INC2 citations73
US10347643B1Jul 9, 2019
Methods of forming integrated assemblies having dielectric regions along conductive structures
MICRON TECHNOLOGY INC2 citations72
US10707215B2Jul 7, 2020
Methods of forming semiconductor devices, and related semiconductor devices, memory devices, and electronic systems
MICRON TECHNOLOGY INC2 citations71
US12363888B2Jul 15, 2025
Memory circuitry and method used in forming memory circuitry
MICRON TECHNOLOGY INC0 citations62
US11785762B2Oct 10, 2023
Memory circuitry and method used in forming memory circuitry
MICRON TECHNOLOGY INC0 citations62
US11502085B2Nov 15, 2022
Integrated memory with redistribution of capacitor connections, and methods of forming integrated memory
MICRON TECHNOLOGY INC0 citations62
US11393688B2Jul 19, 2022
Semiconductor contact formation
MICRON TECHNOLOGY INC1 citations62
US10978295B2Apr 13, 2021
Epitaxial growth on semiconductor structures
MICRON TECHNOLOGY INC0 citations61
US11239240B2Feb 1, 2022
Methods of forming a semiconductor device
MICRON TECHNOLOGY INC0 citations60
US11476255B2Oct 18, 2022
Method used in forming an array of vertical transistors and method used in forming an array of memory cells individually comprising a vertical transistor and a storage device above the vertical transistor
MICRON TECHNOLOGY INC0 citations52
US10957549B2Mar 23, 2021
Methods of forming semiconductor devices using mask materials, and related semiconductor devices and systems
MICRON TECHNOLOGY INC0 citations52
US10790185B2Sep 29, 2020
Methods of sealing openings, and methods of forming integrated assemblies
MICRON TECHNOLOGY INC0 citations52
US10134741B2Nov 20, 2018
Methods of forming an elevationally extending conductor laterally between a pair of conductive lines
MICRON TECHNOLOGY INC0 citations52
US10700073B2Jun 30, 2020
Integrated assemblies having dielectric regions along conductive structures, and methods of forming integrated assemblies
MICRON TECHNOLOGY INC0 citations51
US10665665B2May 26, 2020
Passivation material for a pillar adjacent a trench
MICRON TECHNOLOGY INC0 citations51
US11563008B2Jan 24, 2023
Integrated memory with redistribution of capacitor connections, and methods of forming integrated memory
MICRON TECHNOLOGY INC0 citations49
US9105587B2Aug 11, 2015
Methods of forming semiconductor structures with sulfur dioxide etch chemistries
MICRON TECHNOLOGY INC0 citations41
SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP
12 patentsUS9640252B1May 2, 2017
Method of operating flash memory unit
SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP7 citations84
US11450387B2Sep 20, 2022
Method of controlling internal address for a serial nor flash memory
SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP0 citations52
US11114937B2Sep 7, 2021
Charge pump circuit
SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP0 citations52
US10957399B2Mar 23, 2021
Memory and operation method thereof
SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP0 citations52
US9337723B2May 10, 2016
Charge pump system and memory
SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP0 citations42
US10319448B2Jun 11, 2019
Circuits and methods of reference-current generation for flash
SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP0 citations41
US9525340B1Dec 20, 2016
Boost capacitor circuit and charge pump
SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP0 citations41
US9520202B1Dec 13, 2016
Programming verification control circuit and method for control thereof
SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP0 citations41
US9396801B1Jul 19, 2016
Memory, and erasing method, programming method and reading method thereof
SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP0 citations41
US9030891B2May 12, 2015
Charge pump circuit and memory
SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP0 citations41
US9013230B2Apr 21, 2015
Charge pump circuit
SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP0 citations41
US9406685B2Aug 2, 2016
Flash memory unit and memory array, and programming, erasing and reading method thereof
SHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP0 citations40
YANG GUANGJUN
4 patentsUS8942044B2Jan 27, 2015
Flash memory device
YANG GUANGJUN1 citations49
US9276001B2Mar 1, 2016
Semiconductor device and method for manufacturing the same
YANG GUANGJUN0 citations39
US8755231B2Jun 17, 2014
Flash memory
YANG GUANGJUN0 citations39
US9202582B1Dec 1, 2015
Flash-memory low-speed read mode control circuit
YANG GUANGJUN0 citations28