Inventor
MARTIN JOACHIM
5 patents
Patents
5 patentsUS4042454AAug 16, 1977
Method of producing homogeneously doped n-type Si monocrystals by thermal neutron radiation
SIEMENS AG10 citations72
US4025365AMay 24, 1977
Method of producing homogeneously doped p-conductive semiconductor materials
SIEMENS AG8 citations68
US3967982AJul 6, 1976
Method of doping a semiconductor layer
SIEMENS AG17 citations68
US4048508ASep 13, 1977
Apparatus for doping a semiconductor crystalline rod
SIEMENS AG3 citations60
US4728371AMar 1, 1988
Method for manufacturing regions having adjustable uniform doping in silicon crystal wafers by neutron irradiation
SIEMENS AG4 citations59