Inventor
ROMANO LINDA
US50 patents
⚠️ This page may combine multiple inventors who share the name “ROMANO LINDA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
AVOGY INC
14 patentsUS9196679B2Nov 24, 2015
Schottky diode with buried layer in GaN materials
AVOGY INC1 citations63
US8941117B2Jan 27, 2015
Monolithically integrated vertical JFET and Schottky diode
AVOGY INC3 citations63
US9502544B2Nov 22, 2016
Method and system for planar regrowth in GaN electronic devices
AVOGY INC0 citations52
US9330918B2May 3, 2016
Edge termination by ion implantation in gallium nitride
AVOGY INC0 citations52
US9324844B2Apr 26, 2016
Method and system for a GaN vertical JFET utilizing a regrown channel
AVOGY INC0 citations52
US9287389B2Mar 15, 2016
Method and system for doping control in gallium nitride based devices
AVOGY INC0 citations52
US9171923B2Oct 27, 2015
Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode
AVOGY INC0 citations52
US9171937B2Oct 27, 2015
Monolithically integrated vertical JFET and Schottky diode
AVOGY INC1 citations52
US9171751B2Oct 27, 2015
Method and system for fabricating floating guard rings in GaN materials
AVOGY INC1 citations52
US8853063B2Oct 7, 2014
Method and system for carbon doping control in gallium nitride based devices
AVOGY INC1 citations52
US9508838B2Nov 29, 2016
InGaN ohmic source contacts for vertical power devices
AVOGY INC0 citations51
US9450112B2Sep 20, 2016
GaN-based Schottky barrier diode with algan surface layer
AVOGY INC0 citations51
US9318331B2Apr 19, 2016
Method and system for diffusion and implantation in gallium nitride based devices
AVOGY INC1 citations51
US9117850B2Aug 25, 2015
Method and system for a gallium nitride vertical JFET with self-aligned source and gate
AVOGY INC0 citations48
GLO AB
11 patentsUS9281442B2Mar 8, 2016
III-nitride nanowire LED with strain modified surface active region and method of making thereof
GLO AB46 citations98
US10205054B2Feb 12, 2019
III-nitride nanowire LED with strain modified surface active region and method of making thereof
GLO AB6 citations84
US9882086B2Jan 30, 2018
III-nitride nanowire LED with strain modified surface active region and method of making thereof
GLO AB7 citations84
US9035278B2May 19, 2015
Coalesced nanowire structures with interstitial voids and method for manufacturing the same
GLO AB8 citations84
US9761757B2Sep 12, 2017
III-nitride nanowire LED with strain modified surface active region and method of making thereof
GLO AB3 citations73
US9570651B2Feb 14, 2017
Coalesced nanowire structures with interstitial voids and method for manufacturing the same
GLO AB4 citations73
US9412899B2Aug 9, 2016
Method of stress induced cleaving of semiconductor devices
GLO AB3 citations73
US9287468B2Mar 15, 2016
LED submount with integrated interconnects
GLO AB5 citations73
US9196787B2Nov 24, 2015
Nanowire LED structure with decreased leakage and method of making same
GLO AB2 citations61
US10026866B2Jul 17, 2018
III-nitride nanowire LED with strain modified surface active region and method of making thereof
GLO AB0 citations52
US9196792B2Nov 24, 2015
Nanowire LED structure with decreased leakage and method of making same
GLO AB0 citations40
KIZILYALLI ISIK C
6 patentsUS8502234B2Aug 6, 2013
Monolithically integrated vertical JFET and Schottky diode
KIZILYALLI ISIK C19 citations92
US9117839B2Aug 25, 2015
Method and system for planar regrowth in GAN electronic devices
KIZILYALLI ISIK C8 citations84
US9184305B2Nov 10, 2015
Method and system for a GAN vertical JFET utilizing a regrown gate
KIZILYALLI ISIK C4 citations73
US8969912B2Mar 3, 2015
Method and system for a GaN vertical JFET utilizing a regrown channel
KIZILYALLI ISIK C4 citations73
US8946788B2Feb 3, 2015
Method and system for doping control in gallium nitride based devices
KIZILYALLI ISIK C3 citations63
US8927999B2Jan 6, 2015
Edge termination by ion implantation in GaN
KIZILYALLI ISIK C3 citations62
BOUR DAVID P
4 patentsUS8569153B2Oct 29, 2013
Method and system for carbon doping control in gallium nitride based devices
BOUR DAVID P7 citations84
US9136116B2Sep 15, 2015
Method and system for formation of P-N junctions in gallium nitride based electronics
BOUR DAVID P3 citations62
US9093395B2Jul 28, 2015
Method and system for local control of defect density in gallium nitride based electronics
BOUR DAVID P2 citations62
US8846482B2Sep 30, 2014
Method and system for diffusion and implantation in gallium nitride based devices
BOUR DAVID P0 citations51
DISNEY DONALD R
3 patentsUS8749015B2Jun 10, 2014
Method and system for fabricating floating guard rings in GaN materials
DISNEY DONALD R6 citations84
US8741707B2Jun 3, 2014
Method and system for fabricating edge termination structures in GaN materials
DISNEY DONALD R3 citations63
US8829574B2Sep 9, 2014
Method and system for a GaN vertical JFET with self-aligned source and gate
DISNEY DONALD R2 citations62
ROMANO LINDA
3 patentsUS9159784B2Oct 13, 2015
Aluminum gallium nitride etch stop layer for gallium nitride based devices
ROMANO LINDA4 citations71
US8592298B2Nov 26, 2013
Fabrication of floating guard rings using selective regrowth
ROMANO LINDA5 citations71
US9006800B2Apr 14, 2015
Ingan ohmic source contacts for vertical power devices
ROMANO LINDA2 citations60