Inventor
PENG CHIEN-HSIUNG
US17 patents
⚠️ This page may combine multiple inventors who share the name “PENG CHIEN-HSIUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SHARP LAB OF AMERICA INC
8 patentsUS6242771B1Jun 5, 2001
Chemical vapor deposition of PB5GE3O11 thin film for ferroelectric applications
SHARP LAB OF AMERICA INC27 citations92
US6218249B1Apr 17, 2001
MOS transistor having shallow source/drain junctions and low leakage current
SHARP LAB OF AMERICA INC25 citations92
US6071782AJun 6, 2000
Partial silicidation method to form shallow source/drain junctions
SHARP LAB OF AMERICA INC25 citations92
US6043164AMar 28, 2000
Method for transferring a multi-level photoresist pattern
SHARP LAB OF AMERICA INC42 citations92
US6011285AJan 4, 2000
C-axis oriented thin film ferroelectric transistor memory cell and method of making the same
SHARP LAB OF AMERICA INC32 citations92
US5989965ANov 23, 1999
Nitride overhang structures for the silicidation of transistor electrodes with shallow junction
SHARP LAB OF AMERICA INC16 citations82
US6339245B1Jan 15, 2002
Nitride overhang structure for the silicidation of transistor electrodes with shallow junctions
SHARP LAB OF AMERICA INC10 citations74
US6018171AJan 25, 2000
Shallow junction ferroelectric memory cell having a laterally extending p-n junction and method of making the same
SHARP LAB OF AMERICA INC8 citations74
SHARP KK
3 patentsUS5431958AJul 11, 1995
Metalorganic chemical vapor deposition of ferroelectric thin films
SHARP KK76 citations96
US5717234AFeb 10, 1998
Metalorganic chemical vapor deposition of (ba1-x Srx)RuO3 /Ba1-x Srx)TiO3 /(Ba1-x SRx)RuO3 capacitors for high dielectric materials
SHARP KK24 citations91
US5629229AMay 13, 1997
Metalorganic chemical vapor deposition of (Ba1-x Srx)RuO3 /(Ba1-x Srx)TIO3 /(Ba1-x Srx)TiO3 /(Ba1- Srx)RuO3 capacitors for high dielectric materials
SHARP KK28 citations91