Inventor
WORLEDGE DANIEL
US34 patents
⚠️ This page may combine multiple inventors who share the name “WORLEDGE DANIEL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
33 patentsUS6943571B2Sep 13, 2005
Reduction of positional errors in a four point probe resistance measurement
IBM85 citations98
US6833573B1Dec 21, 2004
Curvature anisotropy in magnetic bits for a magnetic random access memory
IBM15 citations92
US8889433B2Nov 18, 2014
Spin hall effect assisted spin transfer torque magnetic random access memory
IBM16 citations91
US8750033B2Jun 10, 2014
Reading a cross point cell array
IBM9 citations84
US8896041B2Nov 25, 2014
Spin hall effect assisted spin transfer torque magnetic random access memory
IBM13 citations83
US7535069B2May 19, 2009
Magnetic tunnel junction with enhanced magnetic switching characteristics
IBM15 citations82
US7102916B2Sep 5, 2006
Method and structure for selecting anisotropy axis angle of MRAM device for reduced power consumption
IBM8 citations74
US6975124B2Dec 13, 2005
Multipoint nanoprobe
IBM6 citations74
US11501810B2Nov 15, 2022
Amorphous spin diffusion layer for modified double magnetic tunnel junction structure
IBM2 citations73
US11264559B2Mar 1, 2022
Multilayered magnetic free layer structure for spin-transfer torque (STT) MRAM
IBM3 citations73
US10468455B2Nov 5, 2019
Simplified double magnetic tunnel junctions
IBM4 citations73
US9087543B2Jul 21, 2015
Spin torque MRAM having perpendicular magnetization with oxide interface
IBM5 citations73
US7619409B2Nov 17, 2009
Methods and apparatus for electrically characterizing magnetic tunnel junctions having three metal layers separated by two dielectric layers
IBM2 citations63
US7258809B2Aug 21, 2007
MRAM wet etch method
IBM3 citations63
US7034519B2Apr 25, 2006
High frequency measurement for current-in-plane-tunneling
IBM2 citations63
US7009414B2Mar 7, 2006
Atomic force microscope and method for determining properties of a sample surface using an atomic force microscope
IBM4 citations63
US11557628B2Jan 17, 2023
Multilayered magnetic free layer structure containing an ordered magnetic alloy first magnetic free layer for spin-transfer torque (STT) MRAM
IBM0 citations62
US11302863B2Apr 12, 2022
STT MRAM matertails with heavy metal insertion
IBM0 citations62
US10916581B2Feb 9, 2021
Multilayered magnetic free layer structure containing an ordered magnetic alloy first magnetic free layer for spin-transfer torque (STT) MRAM
IBM1 citations62
US10686123B2Jun 16, 2020
Multilayered magnetic free layer structure for spin-transfer torque (STT) MRAM
IBM1 citations62
US11289644B2Mar 29, 2022
Magnetic tunnel junction having all-around structure
IBM1 citations61
US12063868B2Aug 13, 2024
Low RA narrow base modified double magnetic tunnel junction structure
IBM0 citations52
US12020736B2Jun 25, 2024
Spin-orbit-torque magnetoresistive random-access memory array
IBM0 citations52
US9093103B2Jul 28, 2015
Perpendicular magnetization with oxide interface
IBM1 citations52
US9035403B2May 19, 2015
Spin-torque magnetoresistive structures
IBM1 citations52
US8971103B2Mar 3, 2015
Thermally-assisted MRAM with ferromagnetic layers with temperature dependent magnetization
IBM0 citations52
US8908425B2Dec 9, 2014
Thermally-assisted MRAM with ferromagnetic layers with temperature dependent magnetization
IBM0 citations52
US7901588B2Mar 8, 2011
MRAM wet etch method
IBM0 citations52
US7685708B2Mar 30, 2010
Multipoint nanoprobe method of making
IBM0 citations52
US7337536B2Mar 4, 2008
Multipoint nanoprobe and method for fabrication
IBM0 citations52
US7205163B2Apr 17, 2007
Curvature anisotropy in magnetic bits for a magnetic random access memory
IBM1 citations52
US7002194B2Feb 21, 2006
Via AP switching
IBM0 citations52
US10839935B2Nov 17, 2020
Dynamic redundancy for memory
IBM0 citations40