Inventor

FOAD MAJEED A

US52 patents

⚠️ This page may combine multiple inventors who share the name “FOAD MAJEED A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FOAD MAJEED A

APPLIED MATERIALS INC

Boron ion sources for ion implantation apparatus

Extreme ultraviolet mask blank production system with thin absorber and manufacturing system therefor

Dosimetry using optical emission spectroscopy/residual gas analyzer in conjunction with ion current

Method of ultra-shallow junction formation using Si film alloyed with carbon

Extreme ultraviolet capping layer and method of manufacturing and lithography thereof

Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces

Glass ceramic for ultraviolet lithography and method of manufacturing thereof

Monitoring system for deposition and method of operation thereof

Growing graphene on substrates

Portable electrostatic chuck carrier for thin substrates

Extreme ultraviolet mask blank production system with thin absorber and manufacturing system therefor

Planarized extreme ultraviolet lithography blank with absorber and manufacturing system therefor

Extreme ultraviolet reflective element with multilayer stack and method of manufacturing thereof

Extreme ultraviolet (EUV) substrate inspection system with simplified optics and method of manufacturing thereof

In-situ dose monitoring using optical emission spectroscopy

Method of controlling metal silicide formation

Method for measuring dopant concentration during plasma ion implantation

Plasma immersion ion implantation with highly uniform chamber seasoning process for a toroidal source reactor

Physical vapor deposition chamber particle reduction apparatus and methods

Method for removing implanted photo resist from hard disk drive substrates

Plasma immersed ion implantation process using balanced etch-deposition process

Plasma immersion ion implantation using an electrode with edge-effect suppression by a downwardly curving edge

Plasma immersion ion implantation process with chamber seasoning and seasoning layer plasma discharging for wafer dechucking

Extreme ultraviolet lithography system having chuck assembly and method of manufacturing thereof

Monitoring system for deposition and method of operation thereof

Growing graphene on substrates

Patterning of magnetic thin film using energized ions

Method for measuring dopant concentration during plasma ion implantation

Plasma immersed ion implantation process

Extreme ultraviolet mask blank production system with thin absorber and manufacturing system therefor

Extreme ultraviolet reflective element with multilayer stack and method of manufacturing thereof

Extreme ultraviolet reflective element with amorphous layers and method of manufacturing thereof

Safe handling of low energy, high dose arsenic, phosphorus, and boron implanted wafers

Plasma immersion ion implantation process with chamber seasoning and seasoning layer plasma discharging for wafer dechucking

Removal of surface dopants from a substrate

Reducing photoresist layer degradation in plasma immersion ion implantation

FOAD MAJEED A

Modification of magnetic properties of films using ion and neutral beam implantation

HDD pattern implant system

HDD pattern apparatus using laser, E-beam, or focused ion beam

INTUITIVE SURGICAL OPERATIONS

Electronic assemblies including a conformal moisture barrier

Electronic assemblies including a conformal moisture barrier

PORSHNEV PETER I

Plasma immersion ion implantation reactor with extended cathode process ring

Conformal doping in P3I chamber

HANAWA HIROJI

Method for conformal plasma immersed ion implantation assisted by atomic layer deposition

STOWELL MICHAEL W

Apparatus and methods for microwave processing of semiconductor substrates

NALAMASU OMKARAM

Carbon nanotube-based solar cells

LAI CANFENG

Ceiling electrode with process gas dispersers housing plural inductive RF power applicators extending into the plasma

NGUYEN HANH D

Gas distribution system

LI SHIJIAN

Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces

SCOTNEY-CASTLE MATTHEW D

Doping profile modification in P3I process