P

Inventor

RYU MYUNG-KWAN

KR51 patents
⚠️ This page may combine multiple inventors who share the name “RYU MYUNG-KWAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

21 patents
US7923722B2Apr 12, 2011

Thin film transistors and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD162 citations99
US7767505B2Aug 3, 2010

Methods of manufacturing an oxide semiconductor thin film transistor

SAMSUNG ELECTRONICS CO LTD164 citations99
US7943985B2May 17, 2011

Oxide semiconductor thin film transistors and fabrication methods thereof

SAMSUNG ELECTRONICS CO LTD43 citations94
US8349647B2Jan 8, 2013

Thin film transistors and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD23 citations92
US7638360B2Dec 29, 2009

ZnO-based thin film transistor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD16 citations92
US9343534B2May 17, 2016

Semiconductor materials, transistors including the same, and electronic devices including transistors

SAMSUNG ELECTRONICS CO LTD7 citations84
US9245957B2Jan 26, 2016

Semiconductor materials, transistors including the same, and electronic devices including transistors

SAMSUNG ELECTRONICS CO LTD12 citations84
US7682882B2Mar 23, 2010

Method of manufacturing ZnO-based thin film transistor

SAMSUNG ELECTRONICS CO LTD16 citations84
US9660091B2May 23, 2017

Thin film transistor and method of driving same

SAMSUNG ELECTRONICS CO LTD2 citations73
US9123750B2Sep 1, 2015

Transistors including a channel where first and second regions have less oxygen concentration than a remaining region of the channel, methods of manufacturing the transistors, and electronic devices including the transistors

SAMSUNG ELECTRONICS CO LTD4 citations73
US9087907B2Jul 21, 2015

Thin film transistor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD4 citations73
US8829515B2Sep 9, 2014

Transistor having sulfur-doped zinc oxynitride channel layer and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD5 citations73
US9076721B2Jul 7, 2015

Oxynitride channel layer, transistor including the same and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations63
US9384973B2Jul 5, 2016

Methods of forming semiconductor films and methods of manufacturing transistors including semiconductor films

SAMSUNG ELECTRONICS CO LTD0 citations52
US9312391B2Apr 12, 2016

Solution composition for forming oxide semiconductor, and oxide semiconductor and electronic device including the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US9053979B2Jun 9, 2015

Oxide thin film, methods of manufacturing oxide thin film and electronic devices including oxide thin film

SAMSUNG ELECTRONICS CO LTD0 citations52
US8698159B2Apr 15, 2014

Panel structure including transistor and connecting elements, display device including same, and methods of manufacturing panel structure and display device

SAMSUNG ELECTRONICS CO LTD1 citations52
US8658546B2Feb 25, 2014

Solution composition for forming oxide thin film and electronic device including the oxide thin film

SAMSUNG ELECTRONICS CO LTD0 citations52
US8383467B2Feb 26, 2013

Thin film transistor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US7915610B2Mar 29, 2011

ZnO-based thin film transistor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US7851802B2Dec 14, 2010

Poly-crystalline thin film, thin film transistor formed from a poly-crystalline thin film and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD1 citations52

BOE HYDIS TECHNOLOGY CO LTD

5 patents

SON KYOUNG-SEOK

4 patents

SEON JONG-BAEK

4 patents

PARK KYUNG-BAE

3 patents

APPLE INC

2 patents

SAMSUNG DISPLAY CO LTD

2 patents

KIM EOK-SU

2 patents

RYU MYUNG-KWAN

2 patents

MAENG WAN-JOO

1 patent

KIM HYUN-SUK

1 patent

HYDIS TECH CO LTD

1 patent

YOO BYUNG-WOOK

1 patent

PARK JOON-SEOK

1 patent

Showing the top 50 of 51 patents by PatentIndex Score.