Inventor

YUAN JIAHUI

US121 patents

⚠️ This page may combine multiple inventors who share the name “YUAN JIAHUI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YUAN JIAHUI

SANDISK TECHNOLOGIES LLC

Dynamic tuning of first read countermeasures

No-verify programming followed by short circuit test in memory device

Refresh operations for dedicated groups of blocks of memory cells

Three-dimensional NAND memory device containing two terminal selector and methods of using and making thereof

Controlling word line voltages to reduce read disturb in a memory device

Dynamic tuning of first read countermeasures

Adaptive operation of 3D memory

Three dimensional NAND device with channel contacting conductive source line and method of making thereof

Three-dimensional memory array including dual work function floating gates and method of making the same

Loop dependent word line ramp start time for program verify of multi-level NAND memory

Three-dimensional memory device with source line isolation and method of making the same

NAND memory with different pass voltage ramp rates for binary and multi-state memory

Non-volatile memory with data refresh based on data states of adjacent memory cells

Dummy cell resistance tuning in NAND strings

Non-volatile memory with differential temperature compensation for bulk programming

Three-dimensional memory device including multi-bit charge storage elements and methods for forming the same

Multi-level program pulse for programming single level memory cells to reduce damage

Charge storage memory device including ferroelectric layer between control gate electrode layers and methods of making the same

Memory cell group read with compensation for different programming speeds

Non-volatile memory with staggered ramp down at the end of pre-charging

Memory device with temporary kickdown of source voltage before sensing

Non-volatile memory with adapting erase process

Temperature and cycling dependent refresh operation for memory cells

SANDISK TECHNOLOGIES INC

Three dimensional NAND device with channel contacting conductive source line and method of making thereof

Word line dependent channel pre-charge for memory

Data recovery in a 3D memory device with a short circuit between word lines

Charge redistribution during erase in charge trapping memory

Temperature dependent voltage to unselected drain side select transistor during program of 3D NAND

Word line-dependent ramping of pass voltage and program voltage for three-dimensional memory

Dummy voltage to reduce first read effect in memory

Program verify for non-volatile storage

Adaptive program pulse duration based on temperature

Adaptive operation of 3D NAND memory

Read with look-back combined with programming with asymmetric boosting in memory

Look ahead read method for non-volatile memory

Modifying program pulses based on inter-pulse period to reduce program noise

Bias to detect and prevent short circuits in three-dimensional memory device

Protective structure to prevent short circuits in a three-dimensional memory device

Non-volatile storage with process that reduces read disturb on end wordlines

Word line-dependent and temperature-dependent pass voltage during programming

Dynamic reconditioning of charge trapped based memory

Neighboring word line program disturb countermeasure for charge-trapping memory

Temperature dependent voltage to unselected drain side select transistor during program of 3D NAND

Programming of drain side word line to reduce program disturb and charge loss

Single-level cell endurance improvement with pre-defined blocks

WESTERN DIGITAL TECH INC

Isolating problematic memory planes to avoid neighbor plan disturb

Obtaining threshold voltage measurements for memory cells based on a user read mode

Technique for adjusting read timing parameters for read error handling

YUAN JIAHUI

Intelligent shifting of read pass voltages for non-volatile storage

SAMSUNG ELECTRONICS CO LTD

Video sampling method and apparatus using the same