Inventor

TOLLE JOHN

US52 patents

⚠️ This page may combine multiple inventors who share the name “TOLLE JOHN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOLLE JOHN

ASM IP HOLDING BV

Reactor system for sublimation of pre-clean byproducts and method thereof

Methods of forming silicon germanium tin films and structures and devices including the films

Method and system for in situ formation of gas-phase compounds

Structures and devices including germanium-tin films and methods of forming same

Methods of forming highly p-type doped germanium tin films and structures and devices including the films

Germanium oxide pre-clean module and process

Methods of forming films including germanium tin and structures and devices including the films

Doped semiconductor films and processing

Process for forming a film on a substrate using multi-port injection assemblies

Radial and thickness control via biased multi-port injection settings

Plasma pre-clean module and process

Plasma pre-clean module and process

Method for depositing a group IV semiconductor and related semiconductor device structures

Method for depositing a group IV semiconductor and related semiconductor device structures

Reactor system for sublimation of pre-clean byproducts and method thereof

Temperature-controlled flange and reactor system including same

Temperature-controlled flange and reactor system including same

Methods for forming silicon-containing epitaxial layers and related semiconductor device structures

Pre-clean chamber and process with substrate tray for changing substrate temperature

Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly

Method for depositing a Group IV semiconductor and related semiconductor device structures

Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation

Reactor system for sublimation of pre-clean byproducts and method thereof

Method for selectively depositing a Group IV semiconductor and related semiconductor device structures

Method for depositing a group IV semiconductor and related semiconductor device structures

Method and system for in situ formation of gas-phase compounds

Method and device for depositing silicon onto substrates

Pre-clean chamber and process with substrate tray for changing substrate temperature

Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly

Formation of epitaxial layers via dislocation filtering

Method for depositing boron and gallium containing silicon germanium layers

Methods for forming a silicon germanium tin layer and related semiconductor device structures

Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber

Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures

APPLIED MATERIALS INC

Three-color 3D DRAM stack and methods of making

Flow guide structures and heat shield structures, and related methods, for deposition uniformity and process adjustability

Susceptor improvement

Monolithic complementary field-effect transistors having carbon-doped release layers

UNIV ARIZONA STATE

SixSnyGe1-x-y and related alloy heterostructures based on Si, Ge and Sn

GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon

Superhard dielectric compounds and methods of preparation

UNIV ARIZONA

Low temperature epitaxial growth of quaternary wide bandgap semiconductors

Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer

Hydride compounds with silicon and germanium core atoms and method of synthesizing same

KOUVETAKIS JOHN

Method for growing Si-Ge semiconductor materials and devices on substrates

Hydride compounds with silicon and germanium core atoms and method of synthesizing same

ARIZONA BOARD OF REGENTA A BOD

Method for preparing Ge1-x-ySnxEy (E=P, As, Sb) semiconductors and related Si-Ge-Sn-E and Si-Ge-E analogs

ARIZONA BOARD OF REGENTS A COR

Materials and optical devices based on group IV quantum wells grown on Si-Ge-Sn buffered silicon

ASM INC

Tin precursors for vapor deposition and deposition processes

IBM

Machine learning platform for processing data maps