Inventor
SASSIAT NICOLAS
DE13 patents
⚠️ This page may combine multiple inventors who share the name “SASSIAT NICOLAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES INC
12 patentsUS9812573B1Nov 7, 2017
Semiconductor structure including a transistor having stress creating regions and method for the formation thereof
GLOBALFOUNDRIES INC7 citations82
US9960284B2May 1, 2018
Semiconductor structure including a varactor
GLOBALFOUNDRIES INC2 citations70
US9263270B2Feb 16, 2016
Method of forming a semiconductor device structure employing fluorine doping and according semiconductor device structure
GLOBALFOUNDRIES INC2 citations62
US10886419B2Jan 5, 2021
Semiconductor structure including a varactor and method for the formation thereof
GLOBALFOUNDRIES INC0 citations59
US9231045B2Jan 5, 2016
Methods for fabricating integrated circuits with polycrystalline silicon resistor structures using a replacment gate process flow, and the integrated circuits fabricated thereby
GLOBALFOUNDRIES INC1 citations52
US9620589B2Apr 11, 2017
Integrated circuits and methods of fabrication thereof
GLOBALFOUNDRIES INC0 citations51
US9460955B2Oct 4, 2016
Integrated circuits with shallow trench isolations, and methods for producing the same
GLOBALFOUNDRIES INC0 citations51
US9029214B2May 12, 2015
Integrated circuits and methods for fabricating integrated circuits with improved silicide contacts
GLOBALFOUNDRIES INC1 citations51
US8951877B2Feb 10, 2015
Transistor with embedded strain-inducing material formed in cavities based on an amorphization process and a heat treatment
GLOBALFOUNDRIES INC1 citations51
US9396950B2Jul 19, 2016
Low thermal budget schemes in semiconductor device fabrication
GLOBALFOUNDRIES INC0 citations49
US9136266B2Sep 15, 2015
Gate oxide quality for complex MOSFET devices
GLOBALFOUNDRIES INC1 citations49
US8877582B2Nov 4, 2014
Methods of inducing a desired stress in the channel region of a transistor by performing ion implantation/anneal processes on the gate electrode
GLOBALFOUNDRIES INC0 citations41