Inventor
MORAND YVES
FR50 patents
⚠️ This page may combine multiple inventors who share the name “MORAND YVES”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
COMMISSARIAT ENERGIE ATOMIQUE
27 patentsUS7598145B2Oct 6, 2009
Method for producing Si1-yGey based zones with different contents in Ge on a same substrate by condensation of germanium
COMMISSARIAT ENERGIE ATOMIQUE53 citations97
US6521533B1Feb 18, 2003
Method for producing a copper connection
COMMISSARIAT ENERGIE ATOMIQUE28 citations86
US7829916B2Nov 9, 2010
Transistor with a germanium-based channel encased by a gate electrode and method for producing one such transistor
COMMISSARIAT ENERGIE ATOMIQUE15 citations84
US6875686B2Apr 5, 2005
Method for fabricating a structure of interconnections comprising an electric insulation including air or vacuum gaps
COMMISSARIAT ENERGIE ATOMIQUE13 citations77
US10014183B2Jul 3, 2018
Method for patterning a thin film
COMMISSARIAT ENERGIE ATOMIQUE2 citations73
US9502558B2Nov 22, 2016
Local strain generation in an SOI substrate
COMMISSARIAT ENERGIE ATOMIQUE4 citations73
US9425051B2Aug 23, 2016
Method for producing a silicon-germanium film with variable germanium content
COMMISSARIAT ENERGIE ATOMIQUE3 citations73
US9269570B2Feb 23, 2016
Contact on a heterogeneous semiconductor substrate
COMMISSARIAT ENERGIE ATOMIQUE3 citations73
US8962399B2Feb 24, 2015
Method of making a semiconductor layer having at least two different thicknesses
COMMISSARIAT ENERGIE ATOMIQUE4 citations73
US9935019B2Apr 3, 2018
Method of fabricating a transistor channel structure with uniaxial strain
COMMISSARIAT ENERGIE ATOMIQUE2 citations71
US7361592B2Apr 22, 2008
Method for producing a component comprising at least one germanium-based element and component obtained by such a method
COMMISSARIAT ENERGIE ATOMIQUE3 citations63
US11121043B2Sep 14, 2021
Fabrication of transistors having stressed channels
COMMISSARIAT ENERGIE ATOMIQUE1 citations62
US10340361B2Jul 2, 2019
Forming of a MOS transistor based on a two-dimensional semiconductor material
COMMISSARIAT ENERGIE ATOMIQUE1 citations62
US7972971B2Jul 5, 2011
Method for producing Si1-yGey based zones with different contents in Ge on a same substrate by condensation of germanium
COMMISSARIAT ENERGIE ATOMIQUE3 citations62
US11239347B2Feb 1, 2022
Method for making a transistor of which the active region includes a semimetal material
COMMISSARIAT ENERGIE ATOMIQUE0 citations52
US9711567B2Jul 18, 2017
Process for fabricating an integrated circuit cointegrating a FET transistor and an OxRAM memory location
COMMISSARIAT ENERGIE ATOMIQUE1 citations52
US9911820B2Mar 6, 2018
Method for fabrication of a field-effect with reduced stray capacitance
COMMISSARIAT ENERGIE ATOMIQUE1 citations51
US9536951B2Jan 3, 2017
FinFET transistor comprising portions of SiGe with a crystal orientation [111]
COMMISSARIAT ENERGIE ATOMIQUE1 citations51
US9425255B2Aug 23, 2016
Nanowire and planar transistors co-integrated on utbox SOI substrate
COMMISSARIAT ENERGIE ATOMIQUE0 citations51
US9276073B2Mar 1, 2016
Nanowire and planar transistors co-integrated on utbox SOI substrate
COMMISSARIAT ENERGIE ATOMIQUE1 citations51
US9911827B2Mar 6, 2018
SBFET transistor and corresponding fabrication process
COMMISSARIAT ENERGIE ATOMIQUE0 citations50
US9831319B2Nov 28, 2017
Transistor with MIS connections and fabricating process
COMMISSARIAT ENERGIE ATOMIQUE0 citations50
US7625811B2Dec 1, 2009
Method for producing distinct first and second active semi-conducting zones and use thereof for fabricating C-MOS structures
COMMISSARIAT ENERGIE ATOMIQUE1 citations47
US8980702B2Mar 17, 2015
Method of making a transistor
COMMISSARIAT ENERGIE ATOMIQUE0 citations41
US9853130B2Dec 26, 2017
Method of modifying the strain state of a semiconducting structure with stacked transistor channels
COMMISSARIAT ENERGIE ATOMIQUE0 citations40
US10658197B2May 19, 2020
Method for producing low-permittivity spacers
COMMISSARIAT ENERGIE ATOMIQUE0 citations38
US9240325B2Jan 19, 2016
Method for making an integrated circuit
COMMISSARIAT ENERGIE ATOMIQUE0 citations38
ST MICROELECTRONICS SA
11 patentsUS9117805B2Aug 25, 2015
Air-spacer MOS transistor
ST MICROELECTRONICS SA11 citations83
US6734483B2May 11, 2004
Process for fabricating a capacitor within an integrated circuit, and corresponding integrated circuit
ST MICROELECTRONICS SA10 citations73
US7141837B2Nov 28, 2006
High-density MOS transistor
ST MICROELECTRONICS SA10 citations72
US7129563B2Oct 31, 2006
Method of fabricating a semiconductor device comprising a gate dielectric made of high dielectric permittivity material
ST MICROELECTRONICS SA8 citations71
US9236478B2Jan 12, 2016
Method for manufacturing a fin MOS transistor
ST MICROELECTRONICS SA2 citations62
US6228765B1May 8, 2001
Structure and method for forming conductive members in an integrated circuit
ST MICROELECTRONICS SA2 citations61
US9673329B2Jun 6, 2017
Method for manufacturing a fin MOS transistor
ST MICROELECTRONICS SA0 citations52
US8722471B2May 13, 2014
Method for forming a via contacting several levels of semiconductor layers
ST MICROELECTRONICS SA1 citations52
US8822332B2Sep 2, 2014
Method for forming gate, source, and drain contacts on a MOS transistor
ST MICROELECTRONICS SA0 citations51
US6551930B1Apr 22, 2003
Etching an organic material layer, particularly for producing interconnections of the damascene type
ST MICROELECTRONICS SA0 citations51
US7381267B2Jun 3, 2008
Heteroatomic single-crystal layers
ST MICROELECTRONICS SA0 citations49