P

Inventor

MORAND YVES

FR50 patents
⚠️ This page may combine multiple inventors who share the name “MORAND YVES”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

COMMISSARIAT ENERGIE ATOMIQUE

27 patents
US7598145B2Oct 6, 2009

Method for producing Si1-yGey based zones with different contents in Ge on a same substrate by condensation of germanium

COMMISSARIAT ENERGIE ATOMIQUE53 citations97
US6521533B1Feb 18, 2003

Method for producing a copper connection

COMMISSARIAT ENERGIE ATOMIQUE28 citations86
US7829916B2Nov 9, 2010

Transistor with a germanium-based channel encased by a gate electrode and method for producing one such transistor

COMMISSARIAT ENERGIE ATOMIQUE15 citations84
US6875686B2Apr 5, 2005

Method for fabricating a structure of interconnections comprising an electric insulation including air or vacuum gaps

COMMISSARIAT ENERGIE ATOMIQUE13 citations77
US10014183B2Jul 3, 2018

Method for patterning a thin film

COMMISSARIAT ENERGIE ATOMIQUE2 citations73
US9502558B2Nov 22, 2016

Local strain generation in an SOI substrate

COMMISSARIAT ENERGIE ATOMIQUE4 citations73
US9425051B2Aug 23, 2016

Method for producing a silicon-germanium film with variable germanium content

COMMISSARIAT ENERGIE ATOMIQUE3 citations73
US9269570B2Feb 23, 2016

Contact on a heterogeneous semiconductor substrate

COMMISSARIAT ENERGIE ATOMIQUE3 citations73
US8962399B2Feb 24, 2015

Method of making a semiconductor layer having at least two different thicknesses

COMMISSARIAT ENERGIE ATOMIQUE4 citations73
US9935019B2Apr 3, 2018

Method of fabricating a transistor channel structure with uniaxial strain

COMMISSARIAT ENERGIE ATOMIQUE2 citations71
US7361592B2Apr 22, 2008

Method for producing a component comprising at least one germanium-based element and component obtained by such a method

COMMISSARIAT ENERGIE ATOMIQUE3 citations63
US11121043B2Sep 14, 2021

Fabrication of transistors having stressed channels

COMMISSARIAT ENERGIE ATOMIQUE1 citations62
US10340361B2Jul 2, 2019

Forming of a MOS transistor based on a two-dimensional semiconductor material

COMMISSARIAT ENERGIE ATOMIQUE1 citations62
US7972971B2Jul 5, 2011

Method for producing Si1-yGey based zones with different contents in Ge on a same substrate by condensation of germanium

COMMISSARIAT ENERGIE ATOMIQUE3 citations62
US11239347B2Feb 1, 2022

Method for making a transistor of which the active region includes a semimetal material

COMMISSARIAT ENERGIE ATOMIQUE0 citations52
US9711567B2Jul 18, 2017

Process for fabricating an integrated circuit cointegrating a FET transistor and an OxRAM memory location

COMMISSARIAT ENERGIE ATOMIQUE1 citations52
US9911820B2Mar 6, 2018

Method for fabrication of a field-effect with reduced stray capacitance

COMMISSARIAT ENERGIE ATOMIQUE1 citations51
US9536951B2Jan 3, 2017

FinFET transistor comprising portions of SiGe with a crystal orientation [111]

COMMISSARIAT ENERGIE ATOMIQUE1 citations51
US9425255B2Aug 23, 2016

Nanowire and planar transistors co-integrated on utbox SOI substrate

COMMISSARIAT ENERGIE ATOMIQUE0 citations51
US9276073B2Mar 1, 2016

Nanowire and planar transistors co-integrated on utbox SOI substrate

COMMISSARIAT ENERGIE ATOMIQUE1 citations51
US9911827B2Mar 6, 2018

SBFET transistor and corresponding fabrication process

COMMISSARIAT ENERGIE ATOMIQUE0 citations50
US9831319B2Nov 28, 2017

Transistor with MIS connections and fabricating process

COMMISSARIAT ENERGIE ATOMIQUE0 citations50
US7625811B2Dec 1, 2009

Method for producing distinct first and second active semi-conducting zones and use thereof for fabricating C-MOS structures

COMMISSARIAT ENERGIE ATOMIQUE1 citations47
US8980702B2Mar 17, 2015

Method of making a transistor

COMMISSARIAT ENERGIE ATOMIQUE0 citations41
US9853130B2Dec 26, 2017

Method of modifying the strain state of a semiconducting structure with stacked transistor channels

COMMISSARIAT ENERGIE ATOMIQUE0 citations40
US10658197B2May 19, 2020

Method for producing low-permittivity spacers

COMMISSARIAT ENERGIE ATOMIQUE0 citations38
US9240325B2Jan 19, 2016

Method for making an integrated circuit

COMMISSARIAT ENERGIE ATOMIQUE0 citations38

ST MICROELECTRONICS SA

11 patents

COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENE ALT

2 patents

MORAND YVES

2 patents

DESPLOBAIN SEBASTIEN

1 patent

ST MICROELECTRONICS

1 patent

HALIMAOUI AOMAR

1 patent

BENSAHEL DANIEL-CAMILLE

1 patent

VINCENT BENJAMIN

1 patent

ST MICROELECTRONICS CROLLES 2

1 patent

LANDIS STEFAN

1 patent

POIROUX THIERRY

1 patent