Inventor
Lin yu chao
TW103 patents
⚠️ This page may combine multiple inventors who share the name “Lin yu chao”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
37 patentsUS9412666B2Aug 9, 2016
Equal gate height control method for semiconductor device with different pattern densites
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US11818967B2Nov 14, 2023
Sidewall protection for PCRAM device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11411181B2Aug 9, 2022
Phase-change memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11362277B2Jun 14, 2022
Sidewall protection for PCRAM device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11322619B2May 3, 2022
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11245071B2Feb 8, 2022
Memory cell, method of forming the same, and semiconductor device having the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10847716B1Nov 24, 2020
Method for manufacturing a phase change memory device having a second opening above a first opening in the dielectric layer
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10541365B1Jan 21, 2020
Phase change memory and method of fabricating same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10236220B1Mar 19, 2019
Fin field-effect transistor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10170367B2Jan 1, 2019
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9570319B2Feb 14, 2017
Method of manufacturing a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9548305B2Jan 17, 2017
Semiconductor devices and methods of manufacture thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US12471507B2Nov 11, 2025
Memory device and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12426276B2Sep 23, 2025
Semiconductor device, memory cell and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12408565B2Sep 2, 2025
Phase-change memory devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12324362B2Jun 3, 2025
Phase-change memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12317515B2May 27, 2025
Memory device and semiconductor die having the memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12310049B2May 20, 2025
Semiconductor device structure with nanostructure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12256654B2Mar 18, 2025
Memory cell, method of forming the same, and semiconductor device having the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12238933B2Feb 25, 2025
Semiconductor structures and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12237421B2Feb 25, 2025
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12156485B2Nov 26, 2024
Memory cell and semiconductor device having the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12133476B2Oct 29, 2024
Phase change memory device having tapered portion of the bottom memory layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12102018B2Sep 24, 2024
Memory stacks and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12040400B2Jul 16, 2024
Method for forming semiconductor device structure with nanostructure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11997933B2May 28, 2024
Phase-change memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11935958B2Mar 19, 2024
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11925127B2Mar 5, 2024
Phase-change memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11864477B2Jan 2, 2024
Memory cell, method of forming the same, and semiconductor device having the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11805712B2Oct 31, 2023
Phase change memory device having tapered portion of the bottom memory layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11793092B2Oct 17, 2023
Memory stacks and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11616146B2Mar 28, 2023
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11489113B2Nov 1, 2022
Semiconductor device, memory cell and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11411180B2Aug 9, 2022
Phase-change memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11404635B2Aug 2, 2022
Memory stacks and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11393925B2Jul 19, 2022
Semiconductor device structure with nanostructure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11342501B2May 24, 2022
Memory cell, method of forming the same, and semiconductor device having the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
TAIWAN SEMICONDUCTOR MFG
9 patentsUS9214358B1Dec 15, 2015
Equal gate height control method for semiconductor device with different pattern densites
TAIWAN SEMICONDUCTOR MFG43 citations98
US7759239B1Jul 20, 2010
Method of reducing a critical dimension of a semiconductor device
TAIWAN SEMICONDUCTOR MFG36 citations91
US9128384B2Sep 8, 2015
Method of forming a pattern
TAIWAN SEMICONDUCTOR MFG9 citations84
US9123743B2Sep 1, 2015
FinFETs and methods for forming the same
TAIWAN SEMICONDUCTOR MFG9 citations84
US8900937B2Dec 2, 2014
FinFET device structure and methods of making same
TAIWAN SEMICONDUCTOR MFG15 citations84
US8349680B2Jan 8, 2013
High-k metal gate CMOS patterning method
TAIWAN SEMICONDUCTOR MFG9 citations84
US8053323B1Nov 8, 2011
Patterning methodology for uniformity control
TAIWAN SEMICONDUCTOR MFG15 citations84
US9337195B2May 10, 2016
Semiconductor devices and methods of manufacture thereof
TAIWAN SEMICONDUCTOR MFG11 citations82
US9287129B2Mar 15, 2016
Method of fabricating FinFETs
TAIWAN SEMICONDUCTOR MFG3 citations73
Lin yu chao
2 patentsHSU CHIA-HAO
1 patentMSTAR SEMICONDUCTOR INC
1 patentShowing the top 50 of 103 patents by PatentIndex Score.