Inventor

TABAKMAN KEITH H

US22 patents

⚠️ This page may combine multiple inventors who share the name “TABAKMAN KEITH H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TABAKMAN KEITH H

IBM

Stressed transistor with improved metastability

Third type of metal gate stack for CMOS devices

FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth

FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth

finFET with dielectric isolation after gate module for improved source and drain region epitaxial growth

Semiconductor device and method with greater epitaxial growth on 110 crystal plane

FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth

Pre-gate, source/drain strain layer formation

Field effect transistor device

Third type of metal gate stack for CMOS devices

FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth

Third type of metal gate stack for CMOS devices

Electrical fuse with bottom contacts

Method for growing strain-inducing materials in CMOS circuits in a gate first flow

GLOBALFOUNDRIES INC

Contact line having insulating spacer therein and method of forming same

Apparatus and method for aligning integrated circuit layers using multiple grating materials

Gate cut first isolation formation with contact forming process mask protection

Contact line having insulating spacer therein and method of forming same

HOLT JUDSON R

Self aligned device with enhanced stress and methods of manufacture

Self aligned device with enhanced stress and methods of manufacture

CHAN KEVIN K

Field effect transistor device

BAI BO

Method for growing strain-inducing materials in CMOS circuits in a gate first flow