Inventor

LEE TAE YON

KR49 patents

⚠️ This page may combine multiple inventors who share the name “LEE TAE YON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LEE TAE YON

SAMSUNG ELECTRONICS CO LTD

Image sensor and method of fabricating thereof

Time-of-flight (TOF) image sensor using amplitude modulation for range measurement

Unit pixel of stacked image sensor and stacked image sensor including the same

Phase-change memory using single element semimetallic layer

Image sensor and method of fabricating thereof

Image sensor and an image processing device including the same

Image sensor

Image sensors including semiconductor channel patterns

Depth pixel of three-dimensional image sensor and three-dimensional image sensor including the same

Image sensor having a photoelectric conversion layer coupled to a storage node through a pinning layer with P-type impurities

Image sensor and method of fabricating thereof

Image sensor including photoelectric conversion devices

Distance sensor and image processing system including the same

Image sensor with light blocking layer

Image sensor

Image sensor

Image sensor and image processing device

Semiconductor device

Combination sensors and electronic devices

Combination sensors and electronic devices

Methods of operating depth pixel included in three-dimensional image sensor and methods of operating three-dimensional image sensor

Image sensor and method of fabricating thereof

Image sensors with multiple functions and image sensor modules including the same

Image sensor and an image processing device including the same

Image sensors with multiple functions and image sensor modules including the same

Image sensor having an interconnection layer connecting to stacked transparent electrodes and covering a black pixel region

Image sensor having an interconnection covering a black pixel region surrounding an active pixel region

Image sensor

Phase change material layers and phase change memory devices including the same

Phase-change random access memory and method of manufacturing the same

Phase change material, phase change memory device including the same, and methods of manufacturing and operating the phase change memory device

Distance sensor and image processing system including the same

Image sensor, operation method thereof and apparatuses including the same

Image sensors and methods of fabricating the same

Binary CMOS image sensors, methods of operating same, and image processing systems including same

Image sensor including a plurality of pixel regions and an isolation region including device isolation structures

Image sensor chips

Image sensors and methods for manufacturing the same

LEE TAE-YON

Multi-level phase change random access memory device

Image-sensing devices and methods of operating the same

Methods of manufacturing phase-change random access memory devices with phase-change nanowire formation using single element

Phase-change random access memory devices with a phase-change nanowire having a single element

LEE TAE YON

Sensor, method of operating the same, and system including the same

Image sensors for performing thermal reset, methods thereof, and devices including the same

SEOUL NAT UNIV IND FOUNDATION

Phase change material and non-volatile memory device using the same

JIN YOUNG GU

CMOS image sensors with photogate structures and sensing transistors, operation methods thereof, and image processing systems including the same

KIM DOO-GON

Memory controllers to refresh memory sectors in response to writing signals and memory systems including the same

KOREA INST SCI & TECH

Optical recording material and optical recording medium using same

KIM TAE CHAN

Image sensor and image processing system including subpixels having a transfer circuit, comparator and counter for outputting the count value as the subpixel signal