Inventor
LEE SEONKYOO
KR21 patents
Patents
21 patentsUS9601171B2Mar 21, 2017
Storage device including nonvolatile memory and memory controller and operating method of retiming circuit interfacing communication between nonvolatile memory and memory controller
SAMSUNG ELECTRONICS CO LTD10 citations83
US11714579B2Aug 1, 2023
Nonvolatile memory device supporting high-efficiency I/O interface
SAMSUNG ELECTRONICS CO LTD4 citations74
US11372593B2Jun 28, 2022
Nonvolatile memory device supporting high-efficiency I/O interface
SAMSUNG ELECTRONICS CO LTD6 citations74
US11217283B2Jan 4, 2022
Multi-chip package with reduced calibration time and ZQ calibration method thereof
SAMSUNG ELECTRONICS CO LTD3 citations72
US11127462B2Sep 21, 2021
Multi-chip package with reduced calibration time and ZQ calibration method thereof
SAMSUNG ELECTRONICS CO LTD4 citations72
US9886379B2Feb 6, 2018
Solid state driving including nonvolatile memory, random access memory and memory controller
SAMSUNG ELECTRONICS CO LTD3 citations72
US12210773B2Jan 28, 2025
Storage device for transmitting data having an embedded command in both directions of a shared channel, and a method of operating the storage device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12112071B2Oct 8, 2024
Nonvolatile memory device supporting high-efficiency I/O interface
SAMSUNG ELECTRONICS CO LTD0 citations62
US11921664B2Mar 5, 2024
Storage device and retraining method thereof
SAMSUNG ELECTRONICS CO LTD0 citations62
US11756592B2Sep 12, 2023
Memory device supporting DBI interface and operating method of memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11550498B2Jan 10, 2023
Storage device and retraining method thereof
SAMSUNG ELECTRONICS CO LTD1 citations62
US12301236B2May 13, 2025
Equalizer for removing inter symbol interference of data signal by increasing pulse widths of logic low level and logic high level of data signal
SAMSUNG ELECTRONICS CO LTD0 citations61
US12047082B2Jul 23, 2024
Semiconductor device including delay compensation circuit
SAMSUNG ELECTRONICS CO LTD0 citations61
US11522550B2Dec 6, 2022
Semiconductor device including delay compensation circuit
SAMSUNG ELECTRONICS CO LTD0 citations61
US11475955B2Oct 18, 2022
Multi-chip package with reduced calibration time and ZQ calibration method thereof
SAMSUNG ELECTRONICS CO LTD1 citations61
US12483243B2Nov 25, 2025
Semiconductor memory device performing recursive ZQ calibration and calibration method thereof
SAMSUNG ELECTRONICS CO LTD0 citations58
US11810638B2Nov 7, 2023
Memory device including multiple memory chips and data signal lines and a method of operating the memory device
SAMSUNG ELECTRONICS CO LTD0 citations51
US11522261B2Dec 6, 2022
Multi-mode transmission line and storage device including the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US9767873B2Sep 19, 2017
Semiconductor memory system, semiconductor memory device and method of operating the semiconductor memory device
SAMSUNG ELECTRONICS CO LTD1 citations51
US12525269B2Jan 13, 2026
Method of calibrating impedance of memory device and impedance calibration circuit performing the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US12591267B2Mar 31, 2026
Apparatuses and methods for adjusting skews between data and clock
SAMSUNG ELECTRONICS CO LTD0 citations43