P

Inventor

IHM JEONGDON

KR40 patents
⚠️ This page may combine multiple inventors who share the name “IHM JEONGDON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

38 patents
US9748956B2Aug 29, 2017

Integrated circuit and storage device including the same

SAMSUNG ELECTRONICS CO LTD20 citations92
US10262708B2Apr 16, 2019

Memory system performing training operation

SAMSUNG ELECTRONICS CO LTD7 citations84
US9601171B2Mar 21, 2017

Storage device including nonvolatile memory and memory controller and operating method of retiming circuit interfacing communication between nonvolatile memory and memory controller

SAMSUNG ELECTRONICS CO LTD10 citations83
US9263105B2Feb 16, 2016

Memory systems including an input/output buffer circuit

SAMSUNG ELECTRONICS CO LTD9 citations83
US11115021B2Sep 7, 2021

Impedance calibration circuit and memory device including the same

SAMSUNG ELECTRONICS CO LTD5 citations82
US11714579B2Aug 1, 2023

Nonvolatile memory device supporting high-efficiency I/O interface

SAMSUNG ELECTRONICS CO LTD4 citations74
US11372593B2Jun 28, 2022

Nonvolatile memory device supporting high-efficiency I/O interface

SAMSUNG ELECTRONICS CO LTD6 citations74
US11392324B2Jul 19, 2022

Memory device including interface circuit and method of operating the same

SAMSUNG ELECTRONICS CO LTD1 citations72
US11217283B2Jan 4, 2022

Multi-chip package with reduced calibration time and ZQ calibration method thereof

SAMSUNG ELECTRONICS CO LTD3 citations72
US11127462B2Sep 21, 2021

Multi-chip package with reduced calibration time and ZQ calibration method thereof

SAMSUNG ELECTRONICS CO LTD4 citations72
US11107512B2Aug 31, 2021

Memory device and memory system including the same

SAMSUNG ELECTRONICS CO LTD3 citations72
US10998888B2May 4, 2021

Parameter monitoring circuit for detecting error of parameter, duty cycle correction circuit, and impedance calibration circuit

SAMSUNG ELECTRONICS CO LTD2 citations72
US9897650B2Feb 20, 2018

Integrated circuit and storage device including integrated circuit

SAMSUNG ELECTRONICS CO LTD2 citations72
US9886379B2Feb 6, 2018

Solid state driving including nonvolatile memory, random access memory and memory controller

SAMSUNG ELECTRONICS CO LTD3 citations72
US9147489B2Sep 29, 2015

High voltage switch and a nonvolatile memory device including the same

SAMSUNG ELECTRONICS CO LTD4 citations72
US11804841B2Oct 31, 2023

Interface circuit and operating method thereof to compensate for supply voltage variations

SAMSUNG ELECTRONICS CO LTD2 citations70
US11870399B2Jan 9, 2024

Receiver for cancelling common mode offset and crosstalk

SAMSUNG ELECTRONICS CO LTD2 citations68
US11080218B2Aug 3, 2021

Interface chip used to select memory chip and storage device including interface chip and memory chip

SAMSUNG ELECTRONICS CO LTD2 citations68
US12591394B2Mar 31, 2026

Memory device including interface circuit and method of operating the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US12190995B2Jan 7, 2025

Memory device and memory system including the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US12112071B2Oct 8, 2024

Nonvolatile memory device supporting high-efficiency I/O interface

SAMSUNG ELECTRONICS CO LTD0 citations62
US12008268B2Jun 11, 2024

Memory device including interface circuit and method of operating the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11960728B2Apr 16, 2024

Interface circuit, memory device, storage device, and method of operating the memory device

SAMSUNG ELECTRONICS CO LTD0 citations62
US11921664B2Mar 5, 2024

Storage device and retraining method thereof

SAMSUNG ELECTRONICS CO LTD0 citations62
US11769537B2Sep 26, 2023

Memory device and memory system including the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11562780B2Jan 24, 2023

Memory device and memory system including the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11550498B2Jan 10, 2023

Storage device and retraining method thereof

SAMSUNG ELECTRONICS CO LTD1 citations62
US11315614B2Apr 26, 2022

Memory device including interface circuit and method of operating the same

SAMSUNG ELECTRONICS CO LTD1 citations62
US11199975B2Dec 14, 2021

Interface circuit for processing commands, memory device including the same, storage device, and method of operating the memory device

SAMSUNG ELECTRONICS CO LTD0 citations62
US12047082B2Jul 23, 2024

Semiconductor device including delay compensation circuit

SAMSUNG ELECTRONICS CO LTD0 citations61
US11522550B2Dec 6, 2022

Semiconductor device including delay compensation circuit

SAMSUNG ELECTRONICS CO LTD0 citations61
US11502687B2Nov 15, 2022

Impedance calibration circuit and memory device including the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US11475955B2Oct 18, 2022

Multi-chip package with reduced calibration time and ZQ calibration method thereof

SAMSUNG ELECTRONICS CO LTD1 citations61
US11336266B2May 17, 2022

Method of operating a system including a parameter monitoring circuit

SAMSUNG ELECTRONICS CO LTD0 citations61
US12149247B2Nov 19, 2024

Frequency divider and memory device including the same

SAMSUNG ELECTRONICS CO LTD0 citations59
US9881679B2Jan 30, 2018

Method of shaping a strobe signal, a data storage system and strobe signal shaping device

SAMSUNG ELECTRONICS CO LTD0 citations51
US9767873B2Sep 19, 2017

Semiconductor memory system, semiconductor memory device and method of operating the semiconductor memory device

SAMSUNG ELECTRONICS CO LTD1 citations51
US9633743B2Apr 25, 2017

Method of shaping a strobe signal, a data storage system and strobe signal shaping device

SAMSUNG ELECTRONICS CO LTD0 citations51

JEON YOUNGJIN

1 patent

JUNG JIWAN

1 patent