Inventor
TOYONAGA MOTOHIRO
JP3 patents
Patents
3 patentsUS9812565B2Nov 7, 2017
N-channel double diffusion MOS transistor with p-type buried layer underneath n-type drift and drain layers, and semiconductor composite device
ROHM CO LTD0 citations46
US9190513B2Nov 17, 2015
N-channel double diffusion MOS transistor with P-type buried layer under N-type drift layer, and semiconductor composite device
ROHM CO LTD0 citations46
US10070530B2Sep 4, 2018
Electronic component and manufacturing method thereof
ROHM CO LTD0 citations38