P

Inventor

RICHTER RALF

DE140 patents
⚠️ This page may combine multiple inventors who share the name “RICHTER RALF”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GLOBALFOUNDRIES INC

24 patents
US10033383B1Jul 24, 2018

Programmable logic elements and methods of operating the same

GLOBALFOUNDRIES INC63 citations96
US9583640B1Feb 28, 2017

Method including a formation of a control gate of a nonvolatile memory cell and semiconductor structure

GLOBALFOUNDRIES INC30 citations93
US9391176B2Jul 12, 2016

Multi-gate FETs having corrugated semiconductor stacks and method of forming the same

GLOBALFOUNDRIES INC9 citations84
US9012956B2Apr 21, 2015

Channel SiGe removal from PFET source/drain region for improved silicide formation in HKMG technologies without embedded SiGe

GLOBALFOUNDRIES INC8 citations84
US8815741B1Aug 26, 2014

Method of forming a semiconductor structure including an implantation of ions into a layer of spacer material

GLOBALFOUNDRIES INC13 citations84
US8367504B2Feb 5, 2013

Method for forming semiconductor fuses in a semiconductor device comprising metal gates

GLOBALFOUNDRIES INC6 citations84
US7964970B2Jun 21, 2011

Technique for enhancing transistor performance by transistor specific contact design

GLOBALFOUNDRIES INC11 citations84
US10163933B1Dec 25, 2018

Ferro-FET device with buried buffer/ferroelectric layer stack

GLOBALFOUNDRIES INC8 citations83
US9842845B1Dec 12, 2017

Method of forming a semiconductor device structure and semiconductor device structure

GLOBALFOUNDRIES INC13 citations82
US9941348B2Apr 10, 2018

Method of forming a capacitor structure and capacitor structure

GLOBALFOUNDRIES INC2 citations73
US9922986B2Mar 20, 2018

Semiconductor structure including a plurality of pairs of nonvolatile memory cells and an edge cell and method for the formation thereof

GLOBALFOUNDRIES INC5 citations73
US9412859B2Aug 9, 2016

Contact geometry having a gate silicon length decoupled from a transistor length

GLOBALFOUNDRIES INC5 citations73
US8735241B1May 27, 2014

Semiconductor device structure and methods for forming a CMOS integrated circuit structure

GLOBALFOUNDRIES INC4 citations73
US9614003B1Apr 4, 2017

Method of forming a memory device structure and memory device structure

GLOBALFOUNDRIES INC5 citations72
US10249633B2Apr 2, 2019

Flash memory device

GLOBALFOUNDRIES INC2 citations71
US10079242B2Sep 18, 2018

Logic and flash field-effect transistors

GLOBALFOUNDRIES INC4 citations71
US9972634B2May 15, 2018

Semiconductor device comprising a floating gate flash memory device

GLOBALFOUNDRIES INC2 citations71
US9871050B1Jan 16, 2018

Flash memory device

GLOBALFOUNDRIES INC4 citations71
US10176859B2Jan 8, 2019

Non-volatile transistor element including a buried ferroelectric material based storage mechanism

GLOBALFOUNDRIES INC4 citations67
US9324868B2Apr 26, 2016

Epitaxial growth of silicon for FinFETS with non-rectangular cross-sections

GLOBALFOUNDRIES INC3 citations64
US9472642B2Oct 18, 2016

Method of forming a semiconductor device structure and such a semiconductor device structure

GLOBALFOUNDRIES INC2 citations63
US9373720B2Jun 21, 2016

Three-dimensional transistor with improved channel mobility

GLOBALFOUNDRIES INC2 citations63
US9224655B2Dec 29, 2015

Methods of removing gate cap layers in CMOS applications

GLOBALFOUNDRIES INC2 citations63
US9054044B2Jun 9, 2015

Method for forming a semiconductor device and semiconductor device structures

GLOBALFOUNDRIES INC3 citations63

DEGUSSA

7 patents

ADVANCED MICRO DEVICES INC

5 patents

RICHTER RALF

4 patents

LEISTRITZ PUMPEN GMBH

4 patents

IBM

2 patents

ATLAS ELEKTRONIK GMBH

2 patents

DAELLENBACH LUKAS

1 patent

MOWRY ANTHONY

1 patent

Showing the top 50 of 140 patents by PatentIndex Score.