Inventor

MASON JEROD F

US33 patents

⚠️ This page may combine multiple inventors who share the name “MASON JEROD F”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MASON JEROD F

SKYWORKS SOLUTIONS INC

Radio-frequency isolation using porous silicon

Stacked auxiliary field-effect transistor configurations for radio frequency applications

Radio frequency isolation using substrate opening

Substrate opening formation in semiconductor devices

Main-auxiliary field-effect transistor configurations

Main-auxiliary field-effect transistor configurations

Switches with main-auxiliary field-effect transistor configurations

Switches with main-auxiliary field-effect transistor configurations

Main-auxiliary field-effect transistor configurations with an auxiliary stack and interior parallel transistors

MEMS devices having discharge circuits

Compact low loss high frequency switch with improved linearity performance

PHEMT structure having recessed ohmic contact and method for fabricating same

Independently controlled main-auxiliary branch configurations for radio frequency applications

Main-auxiliary field-effect transistor configurations with interior parallel transistors

Segmented main-auxiliary branch configurations for radio frequency applications

Hybrid main-auxiliary field-effect transistor configurations for radio frequency applications

Main-auxiliary field-effect transistor structures for radio frequency applications

Series main-auxiliary field-effect transistor configurations for radio frequency applications

Parallel main-auxiliary field-effect transistor configurations for radio frequency applications

Stacked auxiliary field-effect transistors with buffers for radio frequency applications

Field-effect transistor devices having proximity contact features

Stacked field-effect transistors having proximity electrodes

Discharge circuits, devices and methods

Method for fabricating a recessed ohmic contact for a PHEMT structure

Switch with gate or body connected linearizer

Backside substrate openings in transistor devices

Switches with multiple field-effect transistors having proximity electrodes

Radio-frequency isolation using front side opening

Silicon on porous silicon

pHEMT switch circuits with enhanced linearity performance

PHEMT components with enhanced linearity performance

PRIKHODKO DIMA

Compact low loss high frequency switch with improved linearity performance

Compact switch with enhanced linearity performance