P

Inventor

GOPINATH VENKATESH P

US43 patents
⚠️ This page may combine multiple inventors who share the name “GOPINATH VENKATESH P”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GLOBALFOUNDRIES US INC

15 patents
US12159685B2Dec 3, 2024

Partitioned memory architecture and method for repeatedly using the architecture for multiple in-memory processing layers

GLOBALFOUNDRIES US INC2 citations73
US12136468B2Nov 5, 2024

Calibration methods and structures for partitioned memory architecture with single resistor or dual resistor memory elements

GLOBALFOUNDRIES US INC2 citations73
US12125530B2Oct 22, 2024

Partitioned memory architecture with single resistor or dual resistor memory elements for in-memory pipeline processing

GLOBALFOUNDRIES US INC2 citations73
US12106804B2Oct 1, 2024

Partitioned memory architecture with dual resistor memory elements for in-memory serial processing

GLOBALFOUNDRIES US INC2 citations73
US12426278B2Sep 23, 2025

Resistive memory elements accessed by bipolar junction transistors

GLOBALFOUNDRIES US INC1 citations63
US12532534B2Jan 20, 2026

Transistor arrays with controllable gate voltage

GLOBALFOUNDRIES US INC0 citations62
US12211585B2Jan 28, 2025

Partitioned memory architecture with single resistor memory elements for in-memory serial processing

GLOBALFOUNDRIES US INC0 citations62
US12190930B2Jan 7, 2025

Threshold voltage-programmable field effect transistor-based memory cells and look-up table implemented using the memory cells

GLOBALFOUNDRIES US INC0 citations62
US12176023B2Dec 24, 2024

Non-volatile static random access memory bit cells with ferroelectric field-effect transistors

GLOBALFOUNDRIES US INC0 citations62
US12027226B2Jul 2, 2024

Structure including a cross-bar router and method

GLOBALFOUNDRIES US INC0 citations62
US11990171B2May 21, 2024

Threshold voltage-programmable field effect transistor-based memory cells and look-up table implemented using the memory cells

GLOBALFOUNDRIES US INC0 citations62
US12432936B2Sep 30, 2025

Capacitor integrated with memory element of memory cell

GLOBALFOUNDRIES US INC0 citations61
US12386379B2Aug 12, 2025

Non-volatile current mirror circuit with programmable transistor

GLOBALFOUNDRIES US INC0 citations61
US11855642B1Dec 26, 2023

Programmable delay circuit including threshold-voltage programmable field effect transistor

GLOBALFOUNDRIES US INC1 citations61
US12205633B2Jan 21, 2025

Non-volatile memory device with reference voltage circuit including column(s) of reference bit cells adjacent columns of memory bit cells within a memory cell array

GLOBALFOUNDRIES US INC0 citations45

LSI LOGIC CORP

10 patents

ADESTO TECHNOLOGIES CORP

10 patents

KAMALANATHAN DEEPAK

2 patents

ADESTO TECH CORP

2 patents

LSI CORP

1 patent

ORACLE AMERICA INC

1 patent

SUN MICROSYSTEMS INC

1 patent

DICKINSON PAUL J

1 patent