Inventor
GOPINATH VENKATESH P
US43 patents
⚠️ This page may combine multiple inventors who share the name “GOPINATH VENKATESH P”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES US INC
15 patentsUS12159685B2Dec 3, 2024
Partitioned memory architecture and method for repeatedly using the architecture for multiple in-memory processing layers
GLOBALFOUNDRIES US INC2 citations73
US12136468B2Nov 5, 2024
Calibration methods and structures for partitioned memory architecture with single resistor or dual resistor memory elements
GLOBALFOUNDRIES US INC2 citations73
US12125530B2Oct 22, 2024
Partitioned memory architecture with single resistor or dual resistor memory elements for in-memory pipeline processing
GLOBALFOUNDRIES US INC2 citations73
US12106804B2Oct 1, 2024
Partitioned memory architecture with dual resistor memory elements for in-memory serial processing
GLOBALFOUNDRIES US INC2 citations73
US12426278B2Sep 23, 2025
Resistive memory elements accessed by bipolar junction transistors
GLOBALFOUNDRIES US INC1 citations63
US12532534B2Jan 20, 2026
Transistor arrays with controllable gate voltage
GLOBALFOUNDRIES US INC0 citations62
US12211585B2Jan 28, 2025
Partitioned memory architecture with single resistor memory elements for in-memory serial processing
GLOBALFOUNDRIES US INC0 citations62
US12190930B2Jan 7, 2025
Threshold voltage-programmable field effect transistor-based memory cells and look-up table implemented using the memory cells
GLOBALFOUNDRIES US INC0 citations62
US12176023B2Dec 24, 2024
Non-volatile static random access memory bit cells with ferroelectric field-effect transistors
GLOBALFOUNDRIES US INC0 citations62
US12027226B2Jul 2, 2024
Structure including a cross-bar router and method
GLOBALFOUNDRIES US INC0 citations62
US11990171B2May 21, 2024
Threshold voltage-programmable field effect transistor-based memory cells and look-up table implemented using the memory cells
GLOBALFOUNDRIES US INC0 citations62
US12432936B2Sep 30, 2025
Capacitor integrated with memory element of memory cell
GLOBALFOUNDRIES US INC0 citations61
US12386379B2Aug 12, 2025
Non-volatile current mirror circuit with programmable transistor
GLOBALFOUNDRIES US INC0 citations61
US11855642B1Dec 26, 2023
Programmable delay circuit including threshold-voltage programmable field effect transistor
GLOBALFOUNDRIES US INC1 citations61
US12205633B2Jan 21, 2025
Non-volatile memory device with reference voltage circuit including column(s) of reference bit cells adjacent columns of memory bit cells within a memory cell array
GLOBALFOUNDRIES US INC0 citations45
LSI LOGIC CORP
10 patentsUS6864152B1Mar 8, 2005
Fabrication of trenches with multiple depths on the same substrate
LSI LOGIC CORP94 citations94
US6734081B1May 11, 2004
Shallow trench isolation structure for laser thermal processing
LSI LOGIC CORP21 citations92
US6566244B1May 20, 2003
Process for improving mechanical strength of layers of low k dielectric material
LSI LOGIC CORP20 citations92
US6614283B1Sep 2, 2003
Voltage level shifter
LSI LOGIC CORP52 citations89
US7001823B1Feb 21, 2006
Method of manufacturing a shallow trench isolation structure with low trench parasitic capacitance
LSI LOGIC CORP11 citations84
US7026217B1Apr 11, 2006
Method of forming an antifuse on a semiconductor substrate using wet oxidation of a nitrided substrate
LSI LOGIC CORP15 citations80
US7189628B1Mar 13, 2007
Fabrication of trenches with multiple depths on the same substrate
LSI LOGIC CORP15 citations79
US6586814B1Jul 1, 2003
Etch resistant shallow trench isolation in a semiconductor wafer
LSI LOGIC CORP11 citations71
US6569739B1May 27, 2003
Method of reducing the effect of implantation damage to shallow trench isolation regions during the formation of variable thickness gate layers
LSI LOGIC CORP6 citations63
US8021955B1Sep 20, 2011
Method characterizing materials for a trench isolation structure having low trench parasitic capacitance
LSI LOGIC CORP3 citations62
ADESTO TECHNOLOGIES CORP
10 patentsUS9025396B1May 5, 2015
Pre-conditioning circuits and methods for programmable impedance elements in memory devices
ADESTO TECHNOLOGIES CORP8 citations83
US10984861B1Apr 20, 2021
Reference circuits and methods for resistive memories
ADESTO TECHNOLOGIES CORP3 citations73
US9368206B1Jun 14, 2016
Capacitor arrangements using a resistive switching memory cell structure
ADESTO TECHNOLOGIES CORP3 citations72
US9007808B1Apr 14, 2015
Safeguarding data through an SMT process
ADESTO TECHNOLOGIES CORP5 citations72
US10777268B2Sep 15, 2020
Static random access memories with programmable impedance elements and methods and devices including the same
ADESTO TECHNOLOGIES CORP5 citations71
US9305643B2Apr 5, 2016
Solid electrolyte based memory devices and methods having adaptable read threshold levels
ADESTO TECHNOLOGIES CORP3 citations71
US11056646B2Jul 6, 2021
Memory device having programmable impedance elements with a common conductor formed below bit lines
ADESTO TECHNOLOGIES CORP1 citations62
US9391270B1Jul 12, 2016
Memory cells with vertically integrated tunnel access device and programmable impedance element
ADESTO TECHNOLOGIES CORP2 citations59
US10181496B1Jan 15, 2019
Programmable impedance memory device and related methods
ADESTO TECHNOLOGIES CORP0 citations52
US9818939B2Nov 14, 2017
Resistive switching devices having a switching layer and an intermediate electrode layer and methods of formation thereof
ADESTO TECHNOLOGIES CORP0 citations49
KAMALANATHAN DEEPAK
2 patentsUS8730752B1May 20, 2014
Circuits and methods for placing programmable impedance memory elements in high impedance states
KAMALANATHAN DEEPAK8 citations82
US9368198B1Jun 14, 2016
Circuits and methods for placing programmable impedance memory elements in high impedance states
KAMALANATHAN DEEPAK0 citations50