Inventor
CHANG REN-JIE
BE10 patents
Patents
10 patentsUS12159788B2Dec 3, 2024
Method of forming structures for threshold voltage control
ASM IP HOLDING BV2 citations69
US11898243B2Feb 13, 2024
Method of forming vanadium nitride-containing layer
ASM IP HOLDING BV2 citations69
US12406881B2Sep 2, 2025
Methods and systems for filling a gap
ASM IP HOLDING BV1 citations63
US12463094B2Nov 4, 2025
Multiple-layer method and system for forming material within a gap
ASM IP HOLDING BV0 citations62
US12448683B2Oct 21, 2025
Method of forming a vanadium nitride-containing layer
ASM IP HOLDING BV0 citations59
US12031206B2Jul 9, 2024
Methods and systems for forming a layer comprising a transitional metal and a group 13 element
ASM IP HOLDING BV0 citations57
US12550639B2Feb 10, 2026
Methods and systems for forming a layer comprising vanadium and nitrogen
ASM IP HOLDING BV0 citations51
US12435417B2Oct 7, 2025
Methods and systems for forming a layer comprising vanadium and oxygen
ASM IP HOLDING BV0 citations51
US12571095B2Mar 10, 2026
Low temperature flowable vanadium oxide gap fill
ASM IP HOLDING BV0 citations50
US12009224B2Jun 11, 2024
Apparatus and method for etching metal nitrides
ASM IP HOLDING BV0 citations50