Inventor
HAO MAOSHENG
CN3 patents
⚠️ This page may combine multiple inventors who share the name “HAO MAOSHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNIV SINGAPORE
2 patentsUS6645885B2Nov 11, 2003
Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)
UNIV SINGAPORE31 citations91
US6861271B2Mar 1, 2005
Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)
UNIV SINGAPORE9 citations72