Inventor

XI MING

CN75 patents

⚠️ This page may combine multiple inventors who share the name “XI MING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

XI MING

APPLIED MATERIALS INC

Formation of a tantalum-nitride layer

Chamber seasoning method to improve adhesion of F-containing dielectric film to metal for VLSI application

Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques

Pulsed nucleation deposition of tungsten layers

Apparatus and method for plasma assisted deposition

Formation of composite tungsten films

Integration of titanium and titanium nitride layers

Multiple precursor cyclical deposition system

Cyclical deposition of a variable content titanium silicon nitride layer

Lid assembly for a processing system to facilitate sequential deposition techniques

High temperature susceptor

Methods for depositing tungsten layers employing atomic layer deposition techniques

Clamshell and small volume chamber with fixed substrate support

Selective deposition of a barrier layer on a metal film

Valve control system for atomic layer deposition chamber

Method for depositing tungsten-containing layers by vapor deposition techniques

Method for forming tungsten materials during vapor deposition processes

Method for forming tungsten materials during vapor deposition processes

Method for depositing tungsten-containing layers by vapor deposition techniques

Methods for depositing tungsten layers employing atomic layer deposition techniques

System and method for forming an integrated barrier layer

Method for forming tungsten materials during vapor deposition processes

Apparatus for cyclical deposition of thin films

Method and system for controlling the presence of fluorine in refractory metal layers

Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer

Integration of titanium and titanium nitride layers

Formation of a tantalum-nitride layer

Atomic layer deposition apparatus

Method and system for controlling the presence of fluorine in refractory metal layers

Reliability barrier integration for Cu application

CVD deposition method to improve adhesion of F-containing dielectric metal lines for VLSI application

Formation of composite tungsten films

Method for depositing refractory metal layers employing sequential deposition techniques

Method of titanium/titanium nitride integration

Method of depositing and amorphous fluorocarbon film using HDP-CVD

High temperature resistive heater for a process chamber

Process for chlorine trifluoride chamber cleaning

Process for chlorine trifluoride chamber cleaning

System and method for forming an integrated barrier layer

Plasma-enhanced cyclic layer deposition process for barrier layers

Deposition of tungsten films from W(CO)6

Pulsed deposition process for tungsten nucleation

Multiple precursor cyclical deposition system

Formation of composite tungsten films

Multi-chemistry plating system

Method for depositing tungsten-containing layers by vapor deposition techniques

Plasma treatment of a titanium nitride film formed by chemical vapor deposition

Head for vaporizing and flowing various precursor materials onto semiconductor wafers during chemical vapor deposition

SMARGIASSI EUGENE

Purging of porogen from UV cure chamber

NOVELLUS SYSTEMS INC

Purging of porogen from UV cure chamber