Inventor
SONG ZHITANG
CN21 patents
⚠️ This page may combine multiple inventors who share the name “SONG ZHITANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS
4 patentsUS10679697B2Jun 9, 2020
Read circuit of storage class memory with a read reference circuit, having same bit line parasitic parameters and same read transmission gate parasitic parameters as memory
SHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS1 citations61
US10276234B2Apr 30, 2019
Sb—Te—Ti phase-change memory material and Ti—Sb2Te3 phase-change memory material
SHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS0 citations48
US10411187B2Sep 10, 2019
Phase change material for phase change memory and preparation method therefor
SHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS0 citations47
US10482955B2Nov 19, 2019
Storage array, and storage chip and method for storing logical relationship of objects
SHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS0 citations34
ZHANG CHAO
3 patentsUS8476085B1Jul 2, 2013
Method of fabricating dual trench isolated epitaxial diode array
ZHANG CHAO14 citations81
US8586405B2Nov 19, 2013
Semiconductor device manufacturing method
ZHANG CHAO1 citations51
US9334583B2May 10, 2016
Method of preventing auto-doping during epitaxial layer growth by cleaning the reaction chamber with hydrogen chloride
ZHANG CHAO1 citations49
SILICON STORAGE TECH INC
2 patentsZHANG GUOBIAO
2 patentsSHANGHAI INST MICROSYS & INF
2 patentsUS9276202B2Mar 1, 2016
Phase-change storage unit containing TiSiN material layer and method for preparing the same
SHANGHAI INST MICROSYS & INF2 citations58
US9362493B2Jun 7, 2016
Phase-change storage unit for replacing DRAM and FLASH and manufacturing method thereof
SHANGHAI INST MICROSYS & INF0 citations34