Inventor
INOKUCHI TOMOAKI
JP92 patents
⚠️ This page may combine multiple inventors who share the name “INOKUCHI TOMOAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
39 patentsUS7663171B2Feb 16, 2010
Magneto-resistance effect element and magnetic memory
TOSHIBA KK51 citations98
US8357962B2Jan 22, 2013
Spin transistor and method of manufacturing the same
TOSHIBA KK49 citations94
US7750390B2Jul 6, 2010
Spin fet and spin memory
TOSHIBA KK20 citations93
US7602636B2Oct 13, 2009
Spin MOSFET
TOSHIBA KK36 citations93
US7394684B2Jul 1, 2008
Spin-injection magnetic random access memory
TOSHIBA KK39 citations93
US7266012B2Sep 4, 2007
Magnetoresistive effect element and magnetic memory
TOSHIBA KK28 citations93
US7248497B2Jul 24, 2007
Spin-injection FET
TOSHIBA KK16 citations93
US7239541B2Jul 3, 2007
Spin-injection magnetic random access memory
TOSHIBA KK23 citations93
US7200037B2Apr 3, 2007
Spin-injection FET
TOSHIBA KK15 citations93
US10211394B1Feb 19, 2019
Magnetic memory
TOSHIBA KK16 citations86
US10170694B1Jan 1, 2019
Magnetic memory
TOSHIBA KK10 citations84
US10103199B2Oct 16, 2018
Magnetic memory
TOSHIBA KK9 citations84
US10026465B2Jul 17, 2018
Nonvolatile memory
TOSHIBA KK6 citations84
US9916882B2Mar 13, 2018
Magnetic memory
TOSHIBA KK6 citations84
US9881660B2Jan 30, 2018
Magnetic memory
TOSHIBA KK15 citations84
US9520171B2Dec 13, 2016
Resistive change memory
TOSHIBA KK10 citations84
US8026561B2Sep 27, 2011
Spin MOSFET and reconfigurable logic circuit
TOSHIBA KK7 citations84
US7973351B2Jul 5, 2011
Stack having Heusler alloy, magnetoresistive element and spin transistor using the stack, and method of manufacturing the same
TOSHIBA KK16 citations84
US7956395B2Jun 7, 2011
Spin transistor and magnetic memory
TOSHIBA KK9 citations84
US7943974B2May 17, 2011
Spin MOS field effect transistor and tunneling magnetoresistive effect element using stack having Heusler alloy
TOSHIBA KK7 citations84
US7709867B2May 4, 2010
Spin MOS field effect transistor and tunneling magnetoresistive effect element using stack having Heusler alloy
TOSHIBA KK14 citations84
US7652913B2Jan 26, 2010
Magnetoresistance effect element and magnetic memory
TOSHIBA KK7 citations74
US7511991B2Mar 31, 2009
Spin-injection magnetic random access memory
TOSHIBA KK7 citations74
US10529399B2Jan 7, 2020
Magnetic memory device
TOSHIBA KK2 citations73
US10490736B2Nov 26, 2019
Magnetic memory
TOSHIBA KK2 citations73
US10460784B2Oct 29, 2019
Magnetic memory and memory system
TOSHIBA KK2 citations73
US10361358B2Jul 23, 2019
Spin orbit torque (SOT) MRAM having a source line connected to a spin orbit conductive layer and arranged above a magnetoresistive element
TOSHIBA KK3 citations73
US10109334B2Oct 23, 2018
Magnetic memory
TOSHIBA KK2 citations73
US10102894B2Oct 16, 2018
Magnetic memory
TOSHIBA KK3 citations73
US10068946B2Sep 4, 2018
Magnetic memory
TOSHIBA KK4 citations73
US9570137B2Feb 14, 2017
Magnetic memory and semiconductor-integrated-circuit
TOSHIBA KK5 citations73
US9230625B2Jan 5, 2016
Magnetic memory, spin element, and spin MOS transistor
TOSHIBA KK4 citations73
US10902900B2Jan 26, 2021
Magnetic memory device
TOSHIBA KK0 citations63
US10347313B2Jul 9, 2019
Magnetic memory
TOSHIBA KK1 citations63
US7977719B2Jul 12, 2011
Magneto-resistance effect element and magnetic memory
TOSHIBA KK3 citations63
US7812383B2Oct 12, 2010
Spin memory and spin FET
TOSHIBA KK2 citations63
US7796423B2Sep 14, 2010
Reconfigurable logic circuit
TOSHIBA KK5 citations63
US7649767B2Jan 19, 2010
Spin-injection magnetic random access memory
TOSHIBA KK2 citations63
US10347820B2Jul 9, 2019
Magnetic memory device
TOSHIBA KK1 citations62
MARUKAME TAKAO
4 patentsUS8681033B2Mar 25, 2014
Analog-to-digital converter including differential pair circuit
MARUKAME TAKAO4 citations72
US8576601B2Nov 5, 2013
Content addressable memory
MARUKAME TAKAO5 citations72
US8681034B2Mar 25, 2014
Analog-to-digital converter for dividing reference voltage using plural variable resistors
MARUKAME TAKAO2 citations62
US8330196B2Dec 11, 2012
Semiconductor device and method of manufacturing the same
MARUKAME TAKAO4 citations62
SAITO YOSHIAKI
3 patentsUS8779496B2Jul 15, 2014
Spin FET, magnetoresistive element and spin memory
SAITO YOSHIAKI8 citations84
US8637946B2Jan 28, 2014
Spin MOSFET and reconfigurable logic circuit
SAITO YOSHIAKI4 citations73
US8487359B2Jul 16, 2013
Spin MOSFET and reconfigurable logic circuit using the spin MOSFET
SAITO YOSHIAKI3 citations63
ISHIKAWA MIZUE
2 patentsINOKUCHI TOMOAKI
1 patentSUGIYAMA HIDEYUKI
1 patentShowing the top 50 of 92 patents by PatentIndex Score.