P

Inventor

INOKUCHI TOMOAKI

JP92 patents
⚠️ This page may combine multiple inventors who share the name “INOKUCHI TOMOAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOSHIBA KK

39 patents
US7663171B2Feb 16, 2010

Magneto-resistance effect element and magnetic memory

TOSHIBA KK51 citations98
US8357962B2Jan 22, 2013

Spin transistor and method of manufacturing the same

TOSHIBA KK49 citations94
US7750390B2Jul 6, 2010

Spin fet and spin memory

TOSHIBA KK20 citations93
US7602636B2Oct 13, 2009

Spin MOSFET

TOSHIBA KK36 citations93
US7394684B2Jul 1, 2008

Spin-injection magnetic random access memory

TOSHIBA KK39 citations93
US7266012B2Sep 4, 2007

Magnetoresistive effect element and magnetic memory

TOSHIBA KK28 citations93
US7248497B2Jul 24, 2007

Spin-injection FET

TOSHIBA KK16 citations93
US7239541B2Jul 3, 2007

Spin-injection magnetic random access memory

TOSHIBA KK23 citations93
US7200037B2Apr 3, 2007

Spin-injection FET

TOSHIBA KK15 citations93
US10211394B1Feb 19, 2019

Magnetic memory

TOSHIBA KK16 citations86
US10170694B1Jan 1, 2019

Magnetic memory

TOSHIBA KK10 citations84
US10103199B2Oct 16, 2018

Magnetic memory

TOSHIBA KK9 citations84
US10026465B2Jul 17, 2018

Nonvolatile memory

TOSHIBA KK6 citations84
US9916882B2Mar 13, 2018

Magnetic memory

TOSHIBA KK6 citations84
US9881660B2Jan 30, 2018

Magnetic memory

TOSHIBA KK15 citations84
US9520171B2Dec 13, 2016

Resistive change memory

TOSHIBA KK10 citations84
US8026561B2Sep 27, 2011

Spin MOSFET and reconfigurable logic circuit

TOSHIBA KK7 citations84
US7973351B2Jul 5, 2011

Stack having Heusler alloy, magnetoresistive element and spin transistor using the stack, and method of manufacturing the same

TOSHIBA KK16 citations84
US7956395B2Jun 7, 2011

Spin transistor and magnetic memory

TOSHIBA KK9 citations84
US7943974B2May 17, 2011

Spin MOS field effect transistor and tunneling magnetoresistive effect element using stack having Heusler alloy

TOSHIBA KK7 citations84
US7709867B2May 4, 2010

Spin MOS field effect transistor and tunneling magnetoresistive effect element using stack having Heusler alloy

TOSHIBA KK14 citations84
US7652913B2Jan 26, 2010

Magnetoresistance effect element and magnetic memory

TOSHIBA KK7 citations74
US7511991B2Mar 31, 2009

Spin-injection magnetic random access memory

TOSHIBA KK7 citations74
US10529399B2Jan 7, 2020

Magnetic memory device

TOSHIBA KK2 citations73
US10490736B2Nov 26, 2019

Magnetic memory

TOSHIBA KK2 citations73
US10460784B2Oct 29, 2019

Magnetic memory and memory system

TOSHIBA KK2 citations73
US10361358B2Jul 23, 2019

Spin orbit torque (SOT) MRAM having a source line connected to a spin orbit conductive layer and arranged above a magnetoresistive element

TOSHIBA KK3 citations73
US10109334B2Oct 23, 2018

Magnetic memory

TOSHIBA KK2 citations73
US10102894B2Oct 16, 2018

Magnetic memory

TOSHIBA KK3 citations73
US10068946B2Sep 4, 2018

Magnetic memory

TOSHIBA KK4 citations73
US9570137B2Feb 14, 2017

Magnetic memory and semiconductor-integrated-circuit

TOSHIBA KK5 citations73
US9230625B2Jan 5, 2016

Magnetic memory, spin element, and spin MOS transistor

TOSHIBA KK4 citations73
US10902900B2Jan 26, 2021

Magnetic memory device

TOSHIBA KK0 citations63
US10347313B2Jul 9, 2019

Magnetic memory

TOSHIBA KK1 citations63
US7977719B2Jul 12, 2011

Magneto-resistance effect element and magnetic memory

TOSHIBA KK3 citations63
US7812383B2Oct 12, 2010

Spin memory and spin FET

TOSHIBA KK2 citations63
US7796423B2Sep 14, 2010

Reconfigurable logic circuit

TOSHIBA KK5 citations63
US7649767B2Jan 19, 2010

Spin-injection magnetic random access memory

TOSHIBA KK2 citations63
US10347820B2Jul 9, 2019

Magnetic memory device

TOSHIBA KK1 citations62

MARUKAME TAKAO

4 patents

SAITO YOSHIAKI

3 patents

ISHIKAWA MIZUE

2 patents

INOKUCHI TOMOAKI

1 patent

SUGIYAMA HIDEYUKI

1 patent

Showing the top 50 of 92 patents by PatentIndex Score.