Inventor
ISHIKAWA MIZUE
JP38 patents
⚠️ This page may combine multiple inventors who share the name “ISHIKAWA MIZUE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
24 patentsUS8357962B2Jan 22, 2013
Spin transistor and method of manufacturing the same
TOSHIBA KK49 citations94
US9520171B2Dec 13, 2016
Resistive change memory
TOSHIBA KK10 citations84
US8026561B2Sep 27, 2011
Spin MOSFET and reconfigurable logic circuit
TOSHIBA KK7 citations84
US7973351B2Jul 5, 2011
Stack having Heusler alloy, magnetoresistive element and spin transistor using the stack, and method of manufacturing the same
TOSHIBA KK16 citations84
US7956395B2Jun 7, 2011
Spin transistor and magnetic memory
TOSHIBA KK9 citations84
US7943974B2May 17, 2011
Spin MOS field effect transistor and tunneling magnetoresistive effect element using stack having Heusler alloy
TOSHIBA KK7 citations84
US7709867B2May 4, 2010
Spin MOS field effect transistor and tunneling magnetoresistive effect element using stack having Heusler alloy
TOSHIBA KK14 citations84
US10490736B2Nov 26, 2019
Magnetic memory
TOSHIBA KK2 citations73
US9570137B2Feb 14, 2017
Magnetic memory and semiconductor-integrated-circuit
TOSHIBA KK5 citations73
US9230625B2Jan 5, 2016
Magnetic memory, spin element, and spin MOS transistor
TOSHIBA KK4 citations73
US7796423B2Sep 14, 2010
Reconfigurable logic circuit
TOSHIBA KK5 citations63
US10374150B2Aug 6, 2019
Magnetic memory device
TOSHIBA KK1 citations62
US10360960B2Jul 23, 2019
Magnetic memory device
TOSHIBA KK1 citations62
US10262711B2Apr 16, 2019
Magnetic memory
TOSHIBA KK1 citations62
US10734053B2Aug 4, 2020
Magnetic memory device
TOSHIBA KK0 citations52
US10453513B2Oct 22, 2019
Magnetic memory device
TOSHIBA KK0 citations52
US10283697B2May 7, 2019
Magnetic memory including a magnetoresistive device that includes a first magnetic layer having a fixed magnetization and a second magnetic layer having a changeable magnetization
TOSHIBA KK0 citations52
US9842635B2Dec 12, 2017
Spin transistor memory
TOSHIBA KK0 citations52
US9536583B2Jan 3, 2017
Magnetic memory, spin element, and spin MOS transistor
TOSHIBA KK0 citations52
US9112131B2Aug 18, 2015
Spin MOSFET and reconfigurable logic circuit
TOSHIBA KK1 citations52
US8981436B2Mar 17, 2015
Stacked structure, spin transistor, and reconfigurable logic circuit
TOSHIBA KK0 citations52
US8847288B2Sep 30, 2014
Spin transistors and memory
TOSHIBA KK0 citations52
US8385114B2Feb 26, 2013
Nonvolatile memory circuit using spin MOS transistors
TOSHIBA KK0 citations52
US8373437B2Feb 12, 2013
Look-up table circuits and field programmable gate array
TOSHIBA KK0 citations42
INOKUCHI TOMOAKI
5 patentsUS8139403B2Mar 20, 2012
Spin memory and spin transistor
INOKUCHI TOMOAKI10 citations83
US8111087B2Feb 7, 2012
Semiconductor integrated circuit
INOKUCHI TOMOAKI3 citations62
US8618590B2Dec 31, 2013
Spin transistor, integrated circuit, and magnetic memory
INOKUCHI TOMOAKI1 citations51
US9112139B2Aug 18, 2015
Spin transistor and memory
INOKUCHI TOMOAKI0 citations41
US8958239B2Feb 17, 2015
Magnetic memory element, magnetic memory device, spin transistor, and integrated circuit
INOKUCHI TOMOAKI0 citations41
SUGIYAMA HIDEYUKI
3 patentsUS8154916B2Apr 10, 2012
Nonvolatile memory circuit using spin MOS transistors
SUGIYAMA HIDEYUKI8 citations82
US8405443B2Mar 26, 2013
Pass transistor circuit with memory function, and switching box circuit including the pass transistor circuit
SUGIYAMA HIDEYUKI2 citations61
US8611143B2Dec 17, 2013
Memory circuit using spin MOSFETs, path transistor circuit with memory function, switching box circuit, switching block circuit, and field programmable gate array
SUGIYAMA HIDEYUKI0 citations40