Inventor

SUGIYAMA HIDEYUKI

JP110 patents

⚠️ This page may combine multiple inventors who share the name “SUGIYAMA HIDEYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SUGIYAMA HIDEYUKI

TOSHIBA KK

Magneto-resistance effect element and magnetic memory

Spin transistor, programmable logic circuit, and magnetic memory

Spin transistor and method of manufacturing the same

Spin fet and spin memory

Magneto-resistance effect element with a surface contacting with a side face of electrode having a magnetization direction

Spin MOSFET

Spin-injection magnetic random access memory

Magnetoresistive effect element and magnetic memory

Spin-injection FET

Spin-injection magnetic random access memory

Spin-injection FET

Magneto-resistive effect element and magnetic memory

Switch element, memory element and magnetoresistive effect element

Magnetic memory

Magnetic memory device

Magnetic memory device and method for manufacturing the same

Magnetic memory device

Resistive change memory

Spin MOSFET and reconfigurable logic circuit

Stack having Heusler alloy, magnetoresistive element and spin transistor using the stack, and method of manufacturing the same

Spin transistor and magnetic memory

Spin MOS field effect transistor and tunneling magnetoresistive effect element using stack having Heusler alloy

Spin MOS field effect transistor and tunneling magnetoresistive effect element using stack having Heusler alloy

Spin transistor, programmable logic circuit, and magnetic memory

Magneto-resistive effect element and magnetic memory

Arrangement of a magneto-resistance effect element having a surface contacting a side face of an electrode and magnetic memory using this arrangement

Spin transistor, programmable logic circuit, and magnetic memory

Magnetoresistance effect element and magnetic memory

Spin-injection magnetic random access memory

Magnetic memory apparatus

Magnetic memory device

Magnetic memory

Spin orbit torque (SOT) MRAM having a source line connected to a spin orbit conductive layer and arranged above a magnetoresistive element

Magnetic memory and semiconductor-integrated-circuit

Magnetic memory, spin element, and spin MOS transistor

TAKEDA PHARMACEUTICALS CO

Heterocyclic compound

Heterocyclic compound

Heterocyclic compound

Nitrogen-containing heterocyclic compound and use of same

4-(piperrazin-1-yl)-pyrrolidin-2-one compounds as monoacylglycerol lipase (MAGL) inhibitors

SAITO YOSHIAKI

Spin FET, magnetoresistive element and spin memory

Spin transistor, programmable logic circuit, and magnetic memory

Spin MOSFET and reconfigurable logic circuit

ELIIY POWER CO LTD

Storage battery

SHIRAI JUNYA

Nitrogen-containing heterocyclic compound and use of same

TANAMOTO TETSUFUMI

Programmable logic circuit

INOKUCHI TOMOAKI

Spin memory and spin transistor

ISHIKAWA MIZUE

Tunneling magnetoresistive effect element and spin MOS field-effect transistor

SUGIYAMA HIDEYUKI

Nonvolatile memory circuit using spin MOS transistors

MARUKAME TAKAO

Content addressable memory