Inventor
PATON ERIC
US17 patents
⚠️ This page may combine multiple inventors who share the name “PATON ERIC”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
14 patentsUS6967160B1Nov 22, 2005
Method of manufacturing semiconductor device having nickel silicide with reduced interface roughness
ADVANCED MICRO DEVICES INC18 citations92
US6812550B1Nov 2, 2004
Wafer pattern variation of integrated circuit fabrication
ADVANCED MICRO DEVICES INC27 citations92
US6727176B2Apr 27, 2004
Method of forming reliable Cu interconnects
ADVANCED MICRO DEVICES INC22 citations92
US6689688B2Feb 10, 2004
Method and device using silicide contacts for semiconductor processing
ADVANCED MICRO DEVICES INC21 citations92
US6638861B1Oct 28, 2003
Method of eliminating voids in W plugs
ADVANCED MICRO DEVICES INC20 citations92
US6514859B1Feb 4, 2003
Method of salicide formation with a double gate silicide
ADVANCED MICRO DEVICES INC33 citations91
US6536370B2Mar 25, 2003
Elapsed time indicator for controlled environments and method of use
ADVANCED MICRO DEVICES INC29 citations90
US6297107B1Oct 2, 2001
High dielectric constant materials as gate dielectrics
ADVANCED MICRO DEVICES INC52 citations90
US7033916B1Apr 25, 2006
Shallow junction semiconductor and method for the fabrication thereof
ADVANCED MICRO DEVICES INC13 citations84
US6399467B1Jun 4, 2002
Method of salicide formation
ADVANCED MICRO DEVICES INC19 citations83
US6873051B1Mar 29, 2005
Nickel silicide with reduced interface roughness
ADVANCED MICRO DEVICES INC11 citations74
US6773978B1Aug 10, 2004
Methods for improved metal gate fabrication
ADVANCED MICRO DEVICES INC9 citations74
US6387786B1May 14, 2002
Method of salicide formation by siliciding a gate area prior to siliciding a source and drain area
ADVANCED MICRO DEVICES INC12 citations72
US7298012B2Nov 20, 2007
Shallow junction semiconductor
ADVANCED MICRO DEVICES INC0 citations52