Inventor
YIN GERALD Z
US24 patents
⚠️ This page may combine multiple inventors who share the name “YIN GERALD Z”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
22 patentsUS6308654B1Oct 30, 2001
Inductively coupled parallel-plate plasma reactor with a conical dome
APPLIED MATERIALS INC206 citations99
US5888414AMar 30, 1999
Plasma reactor and processes using RF inductive coupling and scavenger temperature control
APPLIED MATERIALS INC203 citations99
US6602434B1Aug 5, 2003
Process for etching oxide using hexafluorobutadiene or related fluorocarbons and manifesting a wide process window
APPLIED MATERIALS INC280 citations98
US6074959AJun 13, 2000
Method manifesting a wide process window and using hexafluoropropane or other hydrofluoropropanes to selectively etch oxide
APPLIED MATERIALS INC123 citations98
US5556501ASep 17, 1996
Silicon scavenger in an inductively coupled RF plasma reactor
APPLIED MATERIALS INC396 citations98
US6174451B1Jan 16, 2001
Oxide etch process using hexafluorobutadiene and related unsaturated hydrofluorocarbons
APPLIED MATERIALS INC94 citations97
US5904778AMay 18, 1999
Silicon carbide composite article particularly useful for plasma reactors
APPLIED MATERIALS INC146 citations97
US6402885B2Jun 11, 2002
Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma
APPLIED MATERIALS INC42 citations96
US6183655B1Feb 6, 2001
Tunable process for selectively etching oxide using fluoropropylene and a hydrofluorocarbon
APPLIED MATERIALS INC52 citations96
US5607542AMar 4, 1997
Inductively enhanced reactive ion etching
APPLIED MATERIALS INC78 citations96
US5486235AJan 23, 1996
Plasma dry cleaning of semiconductor processing chambers
APPLIED MATERIALS INC74 citations96
US5451784ASep 19, 1995
Composite diagnostic wafer for semiconductor wafer processing systems
APPLIED MATERIALS INC83 citations96
US5540824AJul 30, 1996
Plasma reactor with multi-section RF coil and isolated conducting lid
APPLIED MATERIALS INC85 citations94
US6613691B1Sep 2, 2003
Highly selective oxide etch process using hexafluorobutadiene
APPLIED MATERIALS INC17 citations92
US5965035AOct 12, 1999
Self aligned contact etch using difluoromethane and trifluoromethane
APPLIED MATERIALS INC46 citations92
US5573596ANov 12, 1996
Arc suppression in a plasma processing system
APPLIED MATERIALS INC47 citations92
US5565681AOct 15, 1996
Ion energy analyzer with an electrically controlled geometric filter
APPLIED MATERIALS INC31 citations92
US5685916ANov 11, 1997
Dry cleaning of semiconductor processing chambers
APPLIED MATERIALS INC27 citations91
US5676759AOct 14, 1997
Plasma dry cleaning of semiconductor processing chambers
APPLIED MATERIALS INC25 citations91
US5753137AMay 19, 1998
Dry cleaning of semiconductor processing chambers using non-metallic, carbon-comprising material
APPLIED MATERIALS INC13 citations81
US6503367B1Jan 7, 2003
Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma
APPLIED MATERIALS INC5 citations74
US6361705B1Mar 26, 2002
Plasma process for selectively etching oxide using fluoropropane or fluoropropylene
APPLIED MATERIALS INC7 citations72