Inventor
SHIBATA TOMOHIKO
JP71 patents
⚠️ This page may combine multiple inventors who share the name “SHIBATA TOMOHIKO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NGK INSULATORS LTD
38 patentsUS6426519B1Jul 30, 2002
Epitaxial growth substrate and a method for producing the same
NGK INSULATORS LTD59 citations96
US7033439B2Apr 25, 2006
Apparatus for fabricating a III-V nitride film and a method for fabricating the same
NGK INSULATORS LTD24 citations93
US6583468B2Jun 24, 2003
Semiconductor element
NGK INSULATORS LTD17 citations93
US6534795B2Mar 18, 2003
Semiconductor light-emitting element
NGK INSULATORS LTD30 citations93
US6342748B1Jan 29, 2002
Surface acoustic wave device, substrate therefor and method of manufacturing the substrate
NGK INSULATORS LTD24 citations92
US5936329AAug 10, 1999
Surface acoustic wave device, substrate therefor, and method of manufacturing the substrate
NGK INSULATORS LTD29 citations92
US6495894B2Dec 17, 2002
Photonic device, a substrate for fabricating a photonic device, a method for fabricating the photonic device and a method for manufacturing the photonic device-fabricating substrate
NGK INSULATORS LTD49 citations91
US7955437B2Jun 7, 2011
Apparatus for fabricating a III-V nitride film
NGK INSULATORS LTD8 citations84
US7687824B2Mar 30, 2010
Method of improving surface flatness of group-III nitride crystal, substrate for epitaxial growth, and semiconductor device
NGK INSULATORS LTD8 citations84
US6989202B2Jan 24, 2006
Method for fabricating a III nitride film, an underlayer for fabricating a III nitride film and a method for fabricating the same underlayer
NGK INSULATORS LTD13 citations84
US6869702B2Mar 22, 2005
Substrate for epitaxial growth
NGK INSULATORS LTD17 citations84
US6183555B1Feb 6, 2001
Surface acoustic wave device, substrate therefor, and method of manufacturing the substrate
NGK INSULATORS LTD16 citations84
US7438761B2Oct 21, 2008
Apparatus for fabricating a III-V nitride film and a method for fabricating the same
NGK INSULATORS LTD6 citations74
US6770914B2Aug 3, 2004
III nitride semiconductor substrate for ELO
NGK INSULATORS LTD11 citations74
US6765244B2Jul 20, 2004
III nitride film and a III nitride multilayer
NGK INSULATORS LTD7 citations74
US6709703B2Mar 23, 2004
Method for fabricating a III-V nitride film and an apparatus for fabricating the same
NGK INSULATORS LTD9 citations74
US6707076B2Mar 16, 2004
Semiconductor element
NGK INSULATORS LTD9 citations74
US6649493B2Nov 18, 2003
Method for fabricating a III nitride film, and underlayer for fabricating a III nitride film and a method for fabricating the same underlayer
NGK INSULATORS LTD11 citations74
US6597023B2Jul 22, 2003
Semiconductor light-detecting element
NGK INSULATORS LTD8 citations74
US6573535B2Jun 3, 2003
Semiconductor light-emitting element
NGK INSULATORS LTD12 citations74
US6554896B1Apr 29, 2003
Epitaxial growth substrate and a method for producing the same
NGK INSULATORS LTD7 citations74
US6275123B1Aug 14, 2001
Surface acoustic wave matched filter with dispersive substrate and saw group velocity based output electrode design
NGK INSULATORS LTD13 citations74
US7632741B2Dec 15, 2009
Method for forming AlGaN crystal layer
NGK INSULATORS LTD4 citations63
USRE40485ESep 9, 2008
Semiconductor light-emitting element
NGK INSULATORS LTD4 citations63
USRE40163EMar 25, 2008
Semiconductor light-emitting element
NGK INSULATORS LTD4 citations63
US6835965B2Dec 28, 2004
Semiconductor light-emitting devices
NGK INSULATORS LTD4 citations63
US6781164B2Aug 24, 2004
Semiconductor element
NGK INSULATORS LTD3 citations63
US6759715B2Jul 6, 2004
Epitaxial base substrate and epitaxial substrate
NGK INSULATORS LTD4 citations63
US6749957B2Jun 15, 2004
Method for fabricating a III nitride film, substrate for epitaxial growth, III nitride film, epitaxial growth substrate for III nitride element and III nitride element
NGK INSULATORS LTD4 citations63
US6706620B2Mar 16, 2004
Method for fabricating a nitride film
NGK INSULATORS LTD4 citations63
US6703649B2Mar 9, 2004
Semiconductor element
NGK INSULATORS LTD6 citations63
US6703255B2Mar 9, 2004
Method for fabricating a III nitride film
NGK INSULATORS LTD3 citations63
US6693302B2Feb 17, 2004
Semiconductor light-emitting element
NGK INSULATORS LTD4 citations63
US6677708B2Jan 13, 2004
Semiconductor light-emitting element
NGK INSULATORS LTD2 citations63
US6623877B2Sep 23, 2003
III nitride epitaxial wafer and usage of the same
NGK INSULATORS LTD4 citations63
US6605895B2Aug 12, 2003
Light-emitting element
NGK INSULATORS LTD4 citations63
US6492191B2Dec 10, 2002
Method for manufacturing an A1xGayInzN film using a metal film for heat radiation
NGK INSULATORS LTD5 citations61
US6713954B2Mar 30, 2004
Light-emitting element
NGK INSULATORS LTD4 citations60
IKUTA TETSUYA
6 patentsUS8426893B2Apr 23, 2013
Epitaxial substrate for electronic device and method of producing the same
IKUTA TETSUYA10 citations83
US9006865B2Apr 14, 2015
Epitaxial growth substrate, semiconductor device, and epitaxial growth method
IKUTA TETSUYA15 citations82
US8847203B2Sep 30, 2014
Group III nitride epitaxial laminate substrate
IKUTA TETSUYA7 citations82
US10727303B2Jul 28, 2020
Group III nitride epitaxial substrate and method for manufacturing the same
IKUTA TETSUYA4 citations73
US8410472B2Apr 2, 2013
Epitaxial substrate for electronic device and method of producing the same
IKUTA TETSUYA6 citations71
US10388517B2Aug 20, 2019
Epitaxial substrate for electronic device and method of producing the same
IKUTA TETSUYA1 citations61
SONY SEMICONDUCTOR SOLUTIONS CORP
2 patentsTSUBOCHI KAZUO
1 patentHIRAYAMA HIDEKI
1 patentHAYASHI TELEMPU KK
1 patentHARA JUNICHIRO
1 patentShowing the top 50 of 71 patents by PatentIndex Score.