Inventor
PATTI DAVIDE
IT23 patents
⚠️ This page may combine multiple inventors who share the name “PATTI DAVIDE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS SRL
18 patentsUS6657262B2Dec 2, 2003
Monolithically integrated electronic device and fabrication process therefor
ST MICROELECTRONICS SRL118 citations97
US6774061B2Aug 10, 2004
Nanocrystalline silicon quantum dots within an oxide layer
ST MICROELECTRONICS SRL36 citations92
US6362025B1Mar 26, 2002
Method of manufacturing a vertical-channel MOSFET
ST MICROELECTRONICS SRL33 citations92
US7053463B2May 30, 2006
High-voltage integrated vertical resistor and manufacturing process thereof
ST MICROELECTRONICS SRL11 citations84
US6696741B1Feb 24, 2004
High breakdown voltage PN junction structure, and related manufacturing process
ST MICROELECTRONICS SRL8 citations73
US6548863B2Apr 15, 2003
Lateral DMOS transistor integratable in semiconductor power devices
ST MICROELECTRONICS SRL9 citations73
US6441446B1Aug 27, 2002
Device with integrated bipolar and MOSFET transistors in an emitter switching configuration
ST MICROELECTRONICS SRL9 citations73
US6465857B1Oct 15, 2002
Semiconductor particle detector and a method for its manufacture
ST MICROELECTRONICS SRL8 citations71
US6441445B1Aug 27, 2002
Integrated device with bipolar transistor and electronic switch in “emitter switching” configuration
ST MICROELECTRONICS SRL13 citations71
US6297118B1Oct 2, 2001
Vertical bipolar semiconductor power transistor with an interdigitzed geometry, with optimization of the base-to-emitter potential difference
ST MICROELECTRONICS SRL4 citations62
US6069399AMay 30, 2000
Vertical bipolar semiconductor power transistor with an interdigitized geometry, with optimization of the base-to-emitter potential difference
ST MICROELECTRONICS SRL2 citations62
US6696916B2Feb 24, 2004
Integrated vertical resistor structure with reduced dimensions, for high voltage, and manufacturing process thereof
ST MICROELECTRONICS SRL4 citations60
US6448125B1Sep 10, 2002
Electronic power device integrated on a semiconductor material and related manufacturing process
ST MICROELECTRONICS SRL5 citations54
US6590272B2Jul 8, 2003
Structure for a semiconductor resistive element, particularly for high voltage applications
ST MICROELECTRONICS SRL1 citations52
US7911032B2Mar 22, 2011
Method for generating a signal representative of the current delivered to a load by a power device and relative power device
ST MICROELECTRONICS SRL0 citations51
US7126167B2Oct 24, 2006
Monolithically integrated resistive structure with power IGBT (insulated gate bipolar transistor) devices
ST MICROELECTRONICS SRL0 citations51
US7675135B2Mar 9, 2010
Integrated high voltage power device having an edge termination of enhanced effectiveness
ST MICROELECTRONICS SRL0 citations43
US7528461B2May 5, 2009
Bipolar power transistor and related integrated device with clamp means of the collector voltage
ST MICROELECTRONICS SRL0 citations31