Inventor
JEONG JI-HYUN
KR30 patents
⚠️ This page may combine multiple inventors who share the name “JEONG JI-HYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
23 patentsUS8030129B2Oct 4, 2011
Method of fabricating nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD516 citations99
US9941333B2Apr 10, 2018
Memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD23 citations94
US10685682B2Jun 16, 2020
Memory devices
SAMSUNG ELECTRONICS CO LTD4 citations84
US10263040B2Apr 16, 2019
Memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations84
US9887354B2Feb 6, 2018
Memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations84
US8021966B2Sep 20, 2011
Method fabricating nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD11 citations84
US11735231B2Aug 22, 2023
Memory devices
SAMSUNG ELECTRONICS CO LTD2 citations73
US11201192B2Dec 14, 2021
Memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations73
US11183538B2Nov 23, 2021
Memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US11183223B2Nov 23, 2021
Memory devices
SAMSUNG ELECTRONICS CO LTD2 citations73
US10923162B2Feb 16, 2021
Memory devices
SAMSUNG ELECTRONICS CO LTD1 citations73
US10644069B2May 5, 2020
Memory devices having crosspoint memory arrays therein with multi-level word line and bit line structures
SAMSUNG ELECTRONICS CO LTD6 citations73
US10636843B2Apr 28, 2020
Memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US10566386B2Feb 18, 2020
Variable resistance memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations73
US10566529B2Feb 18, 2020
Memory cell and memory device comprising selection device layer, middle electrode layer and variable resistance layer
SAMSUNG ELECTRONICS CO LTD3 citations73
US10714686B2Jul 14, 2020
Variable resistance memory devices and methods of forming the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US10403817B2Sep 3, 2019
Memory device with memory cell pillar having resistive memory layer with wedge memory portion and body memory portion, and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US11349074B2May 31, 2022
Memory cell and memory device comprising selection device layer, middle electrode layer and variable resistance layer
SAMSUNG ELECTRONICS CO LTD0 citations62
US10916700B2Feb 9, 2021
Memory device with memory cell pillar having resistive memory layer with wedge memory portion and body memory portion, and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US10923655B2Feb 16, 2021
Variable resistance memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US10804466B2Oct 13, 2020
Memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US10056431B2Aug 21, 2018
Variable resistance memory device
SAMSUNG ELECTRONICS CO LTD1 citations50
US10547000B2Jan 28, 2020
Variable resistance memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations49