Inventor

KANG DAE-HWAN

KR32 patents

⚠️ This page may combine multiple inventors who share the name “KANG DAE-HWAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KANG DAE-HWAN

SAMSUNG ELECTRONICS CO LTD

Memory device and method of manufacturing the same

Memory device including ovonic threshold switch adjusting threshold voltage thereof

Memory device and electronic apparatus including the same

Multiple level cell phase-change memory devices having post-programming operation resistance drift saturation, memory systems employing such devices and methods of reading memory devices

Multiple level cell phase-change memory devices having controlled resistance drift parameter, memory systems employing such devices and methods of reading memory devices

Phase change memory devices and read methods using elapsed time-based read voltages

Memory device and method of manufacturing the same

Memory device including ovonic threshold switch adjusting threshold voltage thereof

Memory device and method of manufacturing the same

Variable resistance memory devices and methods of manufacturing the same

Memory device and method of manufacturing the same

Memory device and method of manufacturing the same

Memory devices having crosspoint memory arrays therein with multi-level word line and bit line structures

Memory device and method of manufacturing the same

Memory cell and memory device comprising selection device layer, middle electrode layer and variable resistance layer

Memory device and electronic apparatus including the same

Memory device and method of manufacturing the same

Memory cell and memory device comprising selection device layer, middle electrode layer and variable resistance layer

Semiconductor devices and methods of manufacturing the same

Semiconductor devices and methods of manufacturing the same

Memory device and method of manufacturing the same

Memory device and method of manufacturing the same

Memory device and method of manufacturing the same

Memory device and electronic apparatus including the same

Variable resistance memory devices and methods of manufacturing the same

Variable resistance memory devices and methods of manufacturing the same

KOREA INST SCI & TECH

Phase change material for high density non-volatile memory

Non-volatile electrical phase change memory device comprising interfacial control layer and method for the preparation thereof

Phase change memory cell with transparent conducting oxide for electrode contact material

SEOUL NAT UNIV IND FOUNDATION

Phase change material and non-volatile memory device using the same

HYUNDAI MOTOR CO LTD

Zeolite catalyst for removing nitrogen oxides, method for preparing the same, and method of removing nitrogen oxides using the same

PARK IL MOK

Semiconductor memory devices